Demonstration of 633-nm InGaN-based red light-emitting diodes on a semipolar (11–22) GaN template

Abstract

This work demonstrated semipolar (11–22) InGaN-based red light-emitting diodes (LEDs) with a peak wavelength of 633.4 nm at 1 A/cm². We achieved a strain-relaxed semipolar (11–22) GaN template grown on m-plane sapphire substrate by inserting an in-situ SiN_x layer. X-ray rocking curve shows that the in-plane anisotropy of the template is reduced compared to those without the SiN_x template. At a current density of 1 A/cm², the semipolar LEDs with the SiN_x interlayer exhibit a longer wavelength by 24.4 nm compared to those without the SiN_x layer. The external quantum efficiency (EQE) of the semipolar LED peak at 1.65 % when the current density of 4 A/cm². These findings underscore the potential of utilizing the semipolar (11–22) planes for developing high-performance InGaN-based red LEDs.