Investigation of the microstructural and optical properties of Co doped ErFeO3 thin films synthesized via sol-gel method

IF 2.8 3区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Physica B-condensed Matter Pub Date : 2025-06-01 Epub Date: 2025-03-08 DOI:10.1016/j.physb.2025.417129
Hussein Baqiah , Na Zhang , Mohd Mustafa Awang Kechik , Jagadeesh Pasupuleti , Bandar Ali Al-Asbahi , Naif Mohammed Al-Hada , Jianlei Yang , Qiang Li , Shicai Xu
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Abstract

In this paper, the impacts of chemical doping with Co ions on the microstructural, electronic and optical properties of sol-gel synthesized ErFe1-xCoxO3 thin films, where x = 0.0, 0.05, 0.1 and 0.2, were investigated. The films exhibited high crystalline orthorhombic ErFeO3 phase and showed gradual reduction of lattice parameters with Co doping. Porous microstructure was observed at x = 0.1 and 0.2. The Co ions existed in a mixed valence of Co+2 and Co3+ ions. The energy band gap (Eg) decreased from 2.79 eV for film x = 0.0–2.59 eV for film x = 0.2. The absorption coefficient reduced with Co doping in the range of 3.8–6.0 eV, however, it increased and red shifted at E < 3.8 eV. Both real refractive index and dielectric constant increased for film x = 0.05 at E > 4 eV and then decreased with further increasing of Co doping.
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溶胶-凝胶法制备Co掺杂ErFeO3薄膜的微观结构和光学性能研究
本文研究了化学掺杂 Co 离子对溶胶凝胶合成的 ErFe1-xCoxO3 薄膜(x = 0.0、0.05、0.1 和 0.2)的微观结构、电子和光学特性的影响。薄膜呈现出高结晶度的正方体 ErFeO3 相,并随着 Co 的掺杂,晶格参数逐渐降低。在 x = 0.1 和 0.2 时,观察到多孔的微观结构。Co 离子以 Co+2 和 Co3+ 离子的混合价存在。能带隙(Eg)从薄膜 x = 0.0 时的 2.79 eV 降至薄膜 x = 0.2 时的 2.59 eV。在 3.8-6.0 eV 范围内,随着 Co 的掺杂,吸收系数减小,但在 E < 3.8 eV 时,吸收系数增大并发生红移。在 E > 4 eV 时,薄膜 x = 0.05 的实际折射率和介电常数都有所增加,然后随着 Co 掺杂量的进一步增加而降低。
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来源期刊
Physica B-condensed Matter
Physica B-condensed Matter 物理-物理:凝聚态物理
CiteScore
4.90
自引率
7.10%
发文量
703
审稿时长
44 days
期刊介绍: Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces
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