E. A. Erlingaite, N. G. Andreeva, A. V. El’chishcheva, R. R. Shaikhattarov, I. G. Galeev, B. A. Timerkaev
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引用次数: 0
Abstract
An experimental setup that consists of a vacuum chamber, vacuum pump, power source, pressure gage to measure the pressure in the chamber, ballast resistor, and gas delivery system has been constructed, and the process of SiC growth in an argon arc discharge has been studied. Appropriate process conditions have been selected, and experiments on SiC synthesis have been carried out in the vacuum chamber in an argon atmosphere at a pressure of 350−500 Torr. The grown material has been examined under optical and scanning electron microscopes. It has been reliably established that the presented approach provides the synthesis of SiC nano- and microparticles with a diamond-like structure.
期刊介绍：
Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.
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