Investigation of Analog Memristor Characteristics for Hardware Synaptic Weight in Multilayer Neural Network

IF 6.1 Q1 AUTOMATION & CONTROL SYSTEMS Advanced intelligent systems (Weinheim an der Bergstrasse, Germany) Pub Date : 2025-03-16 DOI:10.1002/aisy.202570012
Jingon Jang, Yoonseok Song, Sungjun Park
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Abstract

Analog Memristor Characteristics

The systematic design of memristor-based neural network is provided by analog conductance state parameters to accurately emulate the software-based high-resolution weight at discrete device level. The requirement of discrete analog conductance of memristor device is measured as ≈50 states with nonlinearity value of ≈0.142 within the deviation range of 5% for inference accuracy of ≈84.36% and loss value of ≈0.168. Further details can be found in article number 2400710 by Jingon Jang, Yoonseok Song, and Sungjun Park.

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多层神经网络中硬件突触权的模拟忆阻特性研究
通过模拟电导状态参数,提供基于忆阻器的神经网络系统设计,在离散器件级精确模拟基于软件的高分辨率权重。测量忆阻器器件离散模拟电导的要求为≈50个状态,在5%的偏差范围内,非线性值为≈0.142,推理精度为≈84.36%,损耗值为≈0.168。详细内容请参见《2400710号文章》(张景根、宋允锡、朴成俊)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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1.30
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审稿时长
4 weeks
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