Recent advancements in pure and doped zinc oxide nanostructures for UV photodetectors application

Abstract

This review highlights the significant advancements in the study of pure and doped zinc oxide (ZnO) for its promising applications in UV photodetectors. Zinc oxide has emerged as one of the most versatile semiconductor materials due to its wide band gap, cost-effectiveness, chemical stability, and exceptional electrical, magnetic, and optical properties. Recent developments in UV photodetectors have underscored their importance across various fields, including military applications, scientific research, commercial uses, UV astronomy, water sterilization, and flame detection. This review elucidates the operational principles of UV detectors and specifically focuses on metal-semiconductor-metal (MSM) photodetectors based on ZnO. We examine the effects of various dopants and impurities on ZnO's performance, discussing key parameters such as responsivity, absorbance, photocurrent generation, response time, and I-V characteristics. This comprehensive analysis serves to enhance the understanding of ZnO-based UV detectors, providing valuable insights for novice researchers and paving the way for future applications in this evolving field.