A. V. Klekovkin, A. A. Rudenko, V. I. Tsekhosh, I. P. Kazakov
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Abstract
Use is made of atomic force and scanning electron microscopies to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the action of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, increasing the temperature of emergence of laterally associated quantum dots by 100°C.
期刊介绍：
Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.
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