Enhancement of the effect of EDTA and GLY on InP alkaline CMP: Removal rate, surface morphology, and theoretical studies

IF 4.6 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science and Engineering: B Pub Date : 2025-04-03 DOI:10.1016/j.mseb.2025.118288

Meiling Qi , Ming Sun , Xueli Yang

{"title":"Enhancement of the effect of EDTA and GLY on InP alkaline CMP: Removal rate, surface morphology, and theoretical studies","authors":"Meiling Qi , Ming Sun , Xueli Yang","doi":"10.1016/j.mseb.2025.118288","DOIUrl":null,"url":null,"abstract":"<div><div>Indium phosphide (InP) substrates are essential in high-efficiency photonic integrated circuits. While acidic InP CMP slurries achieve high material removal rates, they produce toxic byproducts; alkaline slurries are safer but generally have lower removal rates. To address this, researchers developed a novel alkaline slurry by selecting ethylenediaminetetraacetic acid (EDTA) and glycine (GLY) as complexing agents.With the addition of 1.1 wt% EDTA and GLY to the alkaline slurry, the material removal rate increased by 176 nm·min<sup>−1</sup> and 162 nm·min<sup>−1</sup>, respectively, and surface roughness decreased. Electrochemical measurements and quantum chemistry (QC) calculations indicate that both chelating agents form complexes with indium on the InP surface via their carboxyl groups. Furthermore, molecular dynamics (MD) simulations and X-ray photoelectron spectroscopy (XPS) analyses suggest that differences in the adsorption strengths of EDTA and GLY on InP and its oxides account for their varying effects.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"318 ","pages":"Article 118288"},"PeriodicalIF":4.6000,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725003113","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Indium phosphide (InP) substrates are essential in high-efficiency photonic integrated circuits. While acidic InP CMP slurries achieve high material removal rates, they produce toxic byproducts; alkaline slurries are safer but generally have lower removal rates. To address this, researchers developed a novel alkaline slurry by selecting ethylenediaminetetraacetic acid (EDTA) and glycine (GLY) as complexing agents.With the addition of 1.1 wt% EDTA and GLY to the alkaline slurry, the material removal rate increased by 176 nm·min⁻¹ and 162 nm·min⁻¹, respectively, and surface roughness decreased. Electrochemical measurements and quantum chemistry (QC) calculations indicate that both chelating agents form complexes with indium on the InP surface via their carboxyl groups. Furthermore, molecular dynamics (MD) simulations and X-ray photoelectron spectroscopy (XPS) analyses suggest that differences in the adsorption strengths of EDTA and GLY on InP and its oxides account for their varying effects.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

增强 EDTA 和 GLY 对 InP 碱性 CMP 的影响：去除率、表面形态和理论研究

磷化铟（InP）衬底是高效光子集成电路中必不可少的材料。虽然酸性的InP CMP浆料具有很高的物质去除率，但它们会产生有毒的副产物；碱性浆料更安全，但通常去除率较低。为了解决这一问题，研究人员选择乙二胺四乙酸（EDTA）和甘氨酸（GLY）作为络合剂，开发了一种新型碱性浆料。当EDTA和GLY添加量为1.1 wt%时，碱浆的去除率分别提高了176 nm·min - 1和162 nm·min - 1，表面粗糙度降低。电化学测量和量子化学（QC）计算表明，这两种螯合剂通过其羧基在InP表面与铟形成配合物。此外，分子动力学（MD）模拟和x射线光电子能谱（XPS）分析表明，EDTA和GLY对InP及其氧化物的吸附强度差异是其不同效果的原因。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.