Effect of the defect LaP in KDP crystals: first-principles study

IF 2.6 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY CrystEngComm Pub Date : 2025-03-05 DOI:10.1039/D4CE01306A
Huifang Li, Wei Hong, Tingyu Liu, Xu Lu and Jianghai Wang
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Abstract

This study used DFT calculations to examine defect formation energy in potassium dihydrogen phosphate (KDP) with La substituting P. We found that neutral defects and the −3 charged state of LaP are more stable in the crystal. Lattice distortion analysis showed that defects disrupt the crystal structure. The H–O bond attached to the defect centre is shortened by 18.75–18.81%, resulting in HPO42−, which shares an H atom with the defect centre, becoming a hole trap and inducing more intrinsic defects. LaP point defects introduce new defect energy levels in the forbidden band, promoting defect energy level-assisted multiphoton absorption. By analysing the configuration coordinate diagram (CCD) and absorption spectrum, La×P introduces an absorption peak at 415 nm in the visible region, which is in accordance with the experimental results, showing a significant decrease in transmittance of La-doped KDP. The improvement in crystal transmittance after γ-ray irradiation is attributed to the transition of defects from La×P to , resulting in a red-shifted absorption spectrum in the ultraviolet region with a peak at 289 nm. This process produces a large Stokes redshift, which can lead to local melting of the crystal and greatly reduce the optical properties of the crystal.

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缺陷LaP对KDP晶体的影响:第一性原理研究
本研究利用DFT计算计算了以La取代p的磷酸二氢钾(KDP)的缺陷形成能,发现中性缺陷和LaP的−3带电态在晶体中更稳定。晶格畸变分析表明,缺陷破坏了晶体结构。缺陷中心上的氢键缩短了18.75 ~ 18.81%,导致HPO42−与缺陷中心共用一个H原子,形成空穴陷阱,产生更多的本质缺陷。LaP点缺陷在禁带中引入新的缺陷能级,促进缺陷能级辅助多光子吸收。通过对构型坐标图(CCD)和吸收光谱的分析,La×P在可见光区引入了415 nm处的吸收峰,这与实验结果一致,表明掺la的KDP透射率显著降低。γ射线辐照后晶体透光率的提高归因于缺陷从La×P到的转变,导致吸收光谱在紫外区红移,峰值在289 nm处。这一过程会产生较大的Stokes红移,导致晶体局部熔化,大大降低晶体的光学性能。
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来源期刊
CrystEngComm
CrystEngComm 化学-化学综合
CiteScore
5.50
自引率
9.70%
发文量
747
审稿时长
1.7 months
期刊介绍: Design and understanding of solid-state and crystalline materials
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