Output characteristics of photoconductive semiconductor switches at reduced resistive and short-circuit switching

Abstract

The paper determines output characteristics of a photoconductive semiconductor switch with high gain and maximum pulse operating voltage of 32 kV at a load of 50, 25, 4.3 Ω and 42 mΩ at a 10 kV charge voltage when exposed to laser radiation with a wavelength of 355 nm and 25 µJ optical energy. The switch is irradiated with the laser beam with autograph in the form of an elongated ellipse ~300 µm wide and 14 mm long. The resulting output pulses are 56, 71, 106 A at a load of 50, 24.8, and 4.3 Ω, respectively. At these values, the current and resistance parameters change similarly to those observed at the coaxial line discharge to the load. In the case of switching to a 42 mΩ resistor or to a short-circuited section of coaxial line, a received bipolar signal matches the discharge duration of the forming line that strengthens the potential for switch application in a microwave compressor.