MAPbI3 piezoelectric semiconductor and its multifunctional light-force detector

Abstract

MAPbI₃ single crystals possess excellent semiconductor properties and exhibit broad prospects in applications such as photodetection and photovoltaics; however, it is a big challenge to achieve macroscopic piezoelectricity. Herein, MAPbI₃ semiconducting single crystals were fully polarized with a series of pulsed electric fields, and their macroscopic piezoelectric coefficient (d₃₃) value was ∼8.3 pC N⁻¹. A multifunctional force-light detector was prepared using the MAPbI₃ piezoelectric semiconductor. Initially, the self-powered photodetector could detect a 405 nm wavelength laser with an energy density of ≥4 nW cm⁻². Without applied pressure, the self-powered photodetector exhibited a high responsivity of ∼129.6 A W⁻¹ and a high detectivity of ∼7.1 × 10¹⁴ jones. Additionally, external force could optimize the performance of the photodetector, increasing its responsivity and detectivity by 25% under a pressure of 1.5 N and laser illumination intensity of 4.15 mW cm⁻². This work demonstrates that the MAPbI₃ piezoelectric semiconductor is promising in the development of a multifunctional light-force-electrical coupling device.