A Complete Study of MAX Phases Ti3Si1–xCuxC2 (0 ≤ x ≤ 1) Formation: Ab Initio Calculations and Sustainable Synthesis

IF 3.2 3区 化学 Q2 CHEMISTRY, PHYSICAL The Journal of Physical Chemistry C Pub Date : 2025-04-17 DOI:10.1021/acs.jpcc.5c00122
Yelizaveta A. Morkhova, Emil R. Umerov, Vladislav T. Osipov, Andrey V. Sokolov, Artem A. Kabanov
{"title":"A Complete Study of MAX Phases Ti3Si1–xCuxC2 (0 ≤ x ≤ 1) Formation: Ab Initio Calculations and Sustainable Synthesis","authors":"Yelizaveta A. Morkhova, Emil R. Umerov, Vladislav T. Osipov, Andrey V. Sokolov, Artem A. Kabanov","doi":"10.1021/acs.jpcc.5c00122","DOIUrl":null,"url":null,"abstract":"Using density functional theory calculations, we simulated the substitution of silicon by copper in Ti<sub>3</sub>SiC<sub>2</sub> with the formation of Ti<sub>3</sub>Si<sub>1–<i>x</i></sub>Cu<sub><i>x</i></sub>C<sub>2</sub> (<i>x</i> = 0.0; 0.125; 0.25; 0.5; 0.75; 0.875; 1.0). We found that the Si–Cu substitution was possible up to half, with the formation of Ti<sub>3</sub>Si<sub>0.5</sub>Cu<sub>0.5</sub>C<sub>2</sub>. The elastic matrices for Ti<sub>3</sub>SiC<sub>2</sub>, Ti<sub>3</sub>Si<sub>0.5</sub>Cu<sub>0.5</sub>C<sub>2</sub>, and Ti<sub>3</sub>CuC<sub>2</sub> were calculated to determine the effect of substitution on the mechanical properties of the materials. It has been confirmed that the presence of copper leads to a decrease in elastic moduli and an increase in thermal resistivity. In this regard, Ti<sub>3</sub>Si<sub>0.5</sub>Cu<sub>0.5</sub>C<sub>2</sub> may be a promising thermal barrier coating material with a thermal conductivity of about 1.6 W m<sup>–1</sup>K<sup>–1</sup>. According to the electronic structure, both compounds have zero band gaps. In addition, an attempt to synthesize the Ti<sub>3</sub>Si<sub>1–<i>x</i></sub>Cu<sub><i>x</i></sub>C<sub>2</sub> material was carried out using high-temperature self-propagating synthesis. As a result, a sample with more than 70% yield of Ti<sub>3</sub>SiC<sub>2</sub> content was obtained through rapid and environmentally friendly synthesis, and then a 20% yield of Ti<sub>3</sub>Si<sub>0.929</sub>Cu<sub>0.071</sub>C<sub>2</sub> composition was achieved, which was confirmed by the X-ray diffraction and energy-dispersive X-ray spectroscopy investigations.","PeriodicalId":61,"journal":{"name":"The Journal of Physical Chemistry C","volume":"18 1","pages":""},"PeriodicalIF":3.2000,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Journal of Physical Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://doi.org/10.1021/acs.jpcc.5c00122","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

Using density functional theory calculations, we simulated the substitution of silicon by copper in Ti3SiC2 with the formation of Ti3Si1–xCuxC2 (x = 0.0; 0.125; 0.25; 0.5; 0.75; 0.875; 1.0). We found that the Si–Cu substitution was possible up to half, with the formation of Ti3Si0.5Cu0.5C2. The elastic matrices for Ti3SiC2, Ti3Si0.5Cu0.5C2, and Ti3CuC2 were calculated to determine the effect of substitution on the mechanical properties of the materials. It has been confirmed that the presence of copper leads to a decrease in elastic moduli and an increase in thermal resistivity. In this regard, Ti3Si0.5Cu0.5C2 may be a promising thermal barrier coating material with a thermal conductivity of about 1.6 W m–1K–1. According to the electronic structure, both compounds have zero band gaps. In addition, an attempt to synthesize the Ti3Si1–xCuxC2 material was carried out using high-temperature self-propagating synthesis. As a result, a sample with more than 70% yield of Ti3SiC2 content was obtained through rapid and environmentally friendly synthesis, and then a 20% yield of Ti3Si0.929Cu0.071C2 composition was achieved, which was confirmed by the X-ray diffraction and energy-dispersive X-ray spectroscopy investigations.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
MAX相Ti3Si1-xCuxC2(0≤x≤1)形成的完整研究:从头计算和可持续合成
利用密度泛函理论计算,模拟了Ti3SiC2中铜取代硅形成Ti3Si1-xCuxC2 (x = 0.0;0.125;0.25;0.5;0.75;0.875;1.0)。我们发现Si-Cu取代可以达到一半,形成ti3si0.5 cu0.5 cc2。计算了Ti3SiC2、ti3si0.5 cu0.5 5c2和Ti3CuC2的弹性矩阵,以确定取代对材料力学性能的影响。证实了铜的存在导致弹性模量的降低和热电阻率的增加。在这方面,ti3si0.5 cu0.5 cc2可能是一种很有前途的热障涂层材料,其导热系数约为1.6 W m-1K-1。根据电子结构,这两种化合物都具有零带隙。此外,还尝试了高温自传播合成方法合成Ti3Si1-xCuxC2材料。通过快速、环保的合成,获得了Ti3SiC2含量产率大于70%的样品,并通过x射线衍射和能量色散x射线光谱研究证实,Ti3Si0.929Cu0.071C2成分的产率为20%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
The Journal of Physical Chemistry C
The Journal of Physical Chemistry C 化学-材料科学:综合
CiteScore
6.50
自引率
8.10%
发文量
2047
审稿时长
1.8 months
期刊介绍: The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.
期刊最新文献
Studies of Electronic Defects in Cs2NaInCl6 Double Perovskite by GFN1-xTB Calculations Water-Induced Formation of Active Brønsted Acid Sites in MoO3/Al2O3 Catalysts for Olefin Metathesis Enhanced Thermoelectric Performance in WSSe–MgO vdW Heterostructures: Insights from Electronic and Phonon Transport Properties 2D Janus MoXSiN2 (X = S, Se, Te): Excellent Photocatalysts with Extremely High Energy Conversion Efficiency for Water Splitting Electrocatalysis of Oxygen Evolution Reaction on Iron-Loaded Nickel Phosphide from Microkinetic Theory
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1