{"title":"Metastable cubic zinc-blende III/V semiconductors: Growth and structural characteristics","authors":"Andreas Beyer, Wolfgang Stolz, Kerstin Volz","doi":"10.1016/j.pcrysgrow.2015.10.002","DOIUrl":null,"url":null,"abstract":"<div><p><span><span>III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP, become metastable if atoms with significantly smaller or larger covalent radius than the matrix atoms are alloyed. Examples are the incorporation of Boron, Nitrogen and Bismuth in the above-mentioned materials. The resulting multinary compound semiconductors, like for example (Ga,In)(N,As), Ga(N,As,P) and Ga(As,Bi), are extremely interesting for several novel applications. The growth conditions, however, have to be adopted to the </span>metastability of the material systems. In addition, structure formation can occur which is different from stable materials. This paper summarizes our current knowledge on growth characteristics of several </span>metastable materials<span><span>. Mainly examples for Metal Organic Vapor Phase Epitaxy<span> (MOVPE) are given. The MOVPE growth characteristics are compared to selected examples using Molecular Beam Epitaxy growth to highlight that the observed growth characteristics are intrinsic for the studied metastable material systems. Furthermore, structural peculiarities of dilute borides, </span></span>nitrides and bismides occurring during growth as well as in growth interruptions are summarized and correlated to the growth conditions.</span></p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"61 2","pages":"Pages 46-62"},"PeriodicalIF":4.5000,"publicationDate":"2015-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2015.10.002","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization of Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0960897415000145","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 15
Abstract
III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP, become metastable if atoms with significantly smaller or larger covalent radius than the matrix atoms are alloyed. Examples are the incorporation of Boron, Nitrogen and Bismuth in the above-mentioned materials. The resulting multinary compound semiconductors, like for example (Ga,In)(N,As), Ga(N,As,P) and Ga(As,Bi), are extremely interesting for several novel applications. The growth conditions, however, have to be adopted to the metastability of the material systems. In addition, structure formation can occur which is different from stable materials. This paper summarizes our current knowledge on growth characteristics of several metastable materials. Mainly examples for Metal Organic Vapor Phase Epitaxy (MOVPE) are given. The MOVPE growth characteristics are compared to selected examples using Molecular Beam Epitaxy growth to highlight that the observed growth characteristics are intrinsic for the studied metastable material systems. Furthermore, structural peculiarities of dilute borides, nitrides and bismides occurring during growth as well as in growth interruptions are summarized and correlated to the growth conditions.
期刊介绍:
Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research.
Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.