M. Zajac , R. Kucharski , K. Grabianska , A. Gwardys-Bak , A. Puchalski , D. Wasik , E. Litwin-Staszewska , R. Piotrzkowski , J. Z Domagala , M. Bockowski
{"title":"Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives","authors":"M. Zajac , R. Kucharski , K. Grabianska , A. Gwardys-Bak , A. Puchalski , D. Wasik , E. Litwin-Staszewska , R. Piotrzkowski , J. Z Domagala , M. Bockowski","doi":"10.1016/j.pcrysgrow.2018.05.001","DOIUrl":null,"url":null,"abstract":"<div><p><span>Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5 × 10</span><sup>4</sup> cm<sup>−2</sup><span>. Crystals with different types of conductivity<span>, n-type with free electron concentration up to 10</span></span><sup>19</sup> cm<sup>−3</sup>, p-type with free hole concentration of 10<sup>16</sup> cm<sup>−3</sup>, and semi-insulating with resistivity exceeding 10<sup>11</sup><span> Ω cm, can be obtained. Ammonothermal GaN of various electrical properties is described in terms of point defects present in the material. Potential applications of high-quality GaN substrates are also briefly shown.</span></p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"64 3","pages":"Pages 63-74"},"PeriodicalIF":4.5000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2018.05.001","citationCount":"71","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization of Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0960897418300172","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 71
Abstract
Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5 × 104 cm−2. Crystals with different types of conductivity, n-type with free electron concentration up to 1019 cm−3, p-type with free hole concentration of 1016 cm−3, and semi-insulating with resistivity exceeding 1011 Ω cm, can be obtained. Ammonothermal GaN of various electrical properties is described in terms of point defects present in the material. Potential applications of high-quality GaN substrates are also briefly shown.
期刊介绍：
Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research.
Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
