Super-additive interaction of homo- and heterosynaptic plasticity in a hot electron transfer optosynapse for visual sensing memory and logic operations†

IF 5.7 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Materials Chemistry C Pub Date : 2023-08-18 DOI:10.1039/D3TC02255B
Li-Chung Shih, Kuan-Ting Chen, Shi-Cheng Mao, Ya-Chi Huang, Fang-Jui Chu, Tzu-Hsiang Liu, Wen-Hui Cheng and Jen-Sue Chen
{"title":"Super-additive interaction of homo- and heterosynaptic plasticity in a hot electron transfer optosynapse for visual sensing memory and logic operations†","authors":"Li-Chung Shih, Kuan-Ting Chen, Shi-Cheng Mao, Ya-Chi Huang, Fang-Jui Chu, Tzu-Hsiang Liu, Wen-Hui Cheng and Jen-Sue Chen","doi":"10.1039/D3TC02255B","DOIUrl":null,"url":null,"abstract":"<p >In the realm of cognitive neuroscience, the coupling of homosynaptic activation and heterosynaptic modulation plays a crucial role in enhancing consolidation and sharpening long-term memories. Building upon this understanding, the integration of optosynapses within neuromorphic visual systems offers a promising avenue to replicate the fundamental mechanisms of the human visual system, leading to not only reduced communication latency and power consumption but also a heightened level of cognitive performance. In this work, a hot electron transfer optosynapse is realized based on zinc–tin oxide (ZTO) with embedded Au nanoparticle (NP) heterostructure phototransistors. Gate voltage spikes of −5 V (<em>V</em><small><sub>G</sub></small> = −5 V) and 520 nm light are applied as the homosynaptic and modulatory heterosynaptic stimuli, respectively. Due to the light-bias coupling enhanced electron tunneling and hot electrons generated by the intraband transition in Au NPs, super-additivity of homosynaptic and heterosynaptic plasticity can be achieved in the ZTO/Au NPs optosynapse. The learning and memory performance of this bioinspired optosynapse is reinforced due to the super-additive interaction. Furthermore, the hot electron transfer optosynapse is capable of performing logic operations, making it a candidate for integration into neuromorphic computing architectures and the advancement of machine vision.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 34","pages":" 11440-11450"},"PeriodicalIF":5.7000,"publicationDate":"2023-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2023/tc/d3tc02255b","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

In the realm of cognitive neuroscience, the coupling of homosynaptic activation and heterosynaptic modulation plays a crucial role in enhancing consolidation and sharpening long-term memories. Building upon this understanding, the integration of optosynapses within neuromorphic visual systems offers a promising avenue to replicate the fundamental mechanisms of the human visual system, leading to not only reduced communication latency and power consumption but also a heightened level of cognitive performance. In this work, a hot electron transfer optosynapse is realized based on zinc–tin oxide (ZTO) with embedded Au nanoparticle (NP) heterostructure phototransistors. Gate voltage spikes of −5 V (VG = −5 V) and 520 nm light are applied as the homosynaptic and modulatory heterosynaptic stimuli, respectively. Due to the light-bias coupling enhanced electron tunneling and hot electrons generated by the intraband transition in Au NPs, super-additivity of homosynaptic and heterosynaptic plasticity can be achieved in the ZTO/Au NPs optosynapse. The learning and memory performance of this bioinspired optosynapse is reinforced due to the super-additive interaction. Furthermore, the hot electron transfer optosynapse is capable of performing logic operations, making it a candidate for integration into neuromorphic computing architectures and the advancement of machine vision.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
热电子转移光突触中同突触和异突触可塑性的超加性相互作用对视觉感知记忆和逻辑运算的影响[j]
在认知神经科学领域,同突触激活和异突触调节的耦合在增强长期记忆的巩固和锐化中起着至关重要的作用。基于这种理解,在神经形态视觉系统中整合光突触为复制人类视觉系统的基本机制提供了一条有希望的途径,不仅可以减少通信延迟和功耗,还可以提高认知表现水平。本文研究了一种基于锌锡氧化物(ZTO)和嵌入金纳米粒子(NP)异质结构光电晶体管的热电子转移光突触。栅极电压峰为- 5 V (VG = - 5 V), 520 nm光分别作为同突触刺激和调节异突触刺激。由于光偏置耦合增强了Au NPs中的电子隧穿和带内跃迁产生的热电子,ZTO/Au NPs光突触可以实现同突触和异突触可塑性的超加性。这种生物激发的光突触的学习和记忆性能由于超加性相互作用而得到加强。此外,热电子传递光突触能够执行逻辑运算,使其成为集成到神经形态计算体系结构和机器视觉进步的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
期刊最新文献
Back cover Back cover Back cover Correction: Tuning the electrical conductance of oligo(phenylene-ethynylene) derivatives-PbS quantum-dot bilayers Revealing the effect of conductive mechanism on the voltage endurance of ferroelectric thin films via controlling the deposition temperature for reaching high energy storage capability†
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1