Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice.

Ll-Wook Cho, Bom Lee, Kwanjae Lee, Jin Soo Kim, Mee-Yi Ryu
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Abstract

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

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掺硅梯度短周期超晶格InGaN/GaN绿色发光二极管的发光特性
利用光致发光(PL)和时间分辨PL光谱研究了未掺杂梯度短周期超晶格(GSL)和掺硅GSL (SiGSL)的InGaN/GaN绿色发光二极管(led)的光学特性。为了比较,还生长了没有GSL结构的InGaN/GaN传统LED (ced)。由于带填充效应和量子受限斯塔克效应(QCSE)的减弱,SiGSL样品显示出最强的PL强度和最大的PL峰值能量。在10 K时,SiGSL样品的PL衰减时间比ced和GSL样品短。这一发现是由于Si供体的库仑筛选导致QCSE降低,从而增强了振荡器强度。此外,SiGSL样品在300 K时表现出最长的衰减时间,这是由于缺陷和位错密度降低所致。这些结果表明,在InGaN/GaN绿色led中插入掺硅GSL结构是改善其光学性能的有效策略。
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来源期刊
Journal of nanoscience and nanotechnology
Journal of nanoscience and nanotechnology 工程技术-材料科学:综合
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审稿时长
3.6 months
期刊介绍: JNN is a multidisciplinary peer-reviewed journal covering fundamental and applied research in all disciplines of science, engineering and medicine. JNN publishes all aspects of nanoscale science and technology dealing with materials synthesis, processing, nanofabrication, nanoprobes, spectroscopy, properties, biological systems, nanostructures, theory and computation, nanoelectronics, nano-optics, nano-mechanics, nanodevices, nanobiotechnology, nanomedicine, nanotoxicology.
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