Building an Efficient Optoelectronic Property at the AZO/Cu/AZO Heterogeneous Interface with Copper Intercalation

Abstract

The AZO/Cu/AZO heterogeneous interface is prepared to improve the optoelectronic property of AZO as Cu intercalation is introduced. The experimental results show that the Cu layer is at 8 nm, the (002) peak intensity of the sample reaches the maximum, the crystallization quality is the best, the roughness is the lowest, and the transmittance and conductivity have better values. In the meantime, the simulation results show that the interface of AZO/Cu is bonded, and the conductivity of AZO/Cu is higher than that of AZO, but the transmittance is the opposite. This is consistent with the experimental results. The research implies that we can design efficient optoelectronic properties with an AZO/Cu/AZO heterogeneous interface by adjusting Cu intercalation.