V. Ciupină, M. Albu, A. Caraiane, C. Porosnicu, C. Staicu, V. Nicolescu, R. Manu
{"title":"Nitrogen doped ZrO2 thin films: synthesis and characterization","authors":"V. Ciupină, M. Albu, A. Caraiane, C. Porosnicu, C. Staicu, V. Nicolescu, R. Manu","doi":"10.15251/jor.2022.186.759","DOIUrl":null,"url":null,"abstract":"To obtain ZrO2 and ZrO2+N2 thin films was used magnetron sputtering in radio frequency mode in a 10-6 mbar high vacuum deposition chamber. Silicon and carbon substrates measuring 12x15mm were used for deposition. The used magnetron system was composed of a single water-cooled cathode, provided with one circular targets of ZrO2 (2 mm thick and 50 mm in diameter) of high purity (99.95%). TDS Analysis of the films was performed. The desorbed species were observed with a QMG 220 Mass spectrometer provided with a W filament. It can be observed that in the case of the ZnO2 film, nitrogen desorption registers two maxima with signal intensity of 9.7x10-12 and 9.0x10-12, reached after 2000s and 4900s respectively. In the case of ZrO2+N2 film, nitrogen desorption shows a pronounced maximum with a signal intensity of 2.4x10-11 reached after 6000s. . The topology the ZrO2 and ZrO2+N2 samples deposited on Si substrates have been investigated by scanning electron microscopy (SEM) using a FEI Inspect S scanning electron microscope ( Hillsboro, Oregon, OR, USA) in high-vacuum modes. For the ZrO2 deposition, the surface appears to have grain-like topology, with a mean dimension of around 150 nm. These structures do not appear for the ZrO2+N2 deposition. Instead, for the ZrO2+N2 sample, small blisters (between 300 nm and 1.000nm) have formed on the surface, as a consequence of injecting N2 during the deposition. Cross-section measurements were also performed to establish the layer thickness. The ZrO2 sample has a measured thickness of 1950nm, while the introduction of N2 gas for the ZrO2+N2 sample had a poisoning effect on the magnetron target that led to a decrease (5 times) in deposition rate, giving this sample a final thickness of 365nm (compared to 1950nm) for the same deposition The crystalline structure was investigated using X-Ray Diffraction (XRD) method. The experimental set-up was composed of a diffractometer equipped with a Cu-Kα X-ray sourse, with a specific wavelength of 0.154nm, in a Bragg-Bretano type geometry. In this way, a crystalline phase corresponding to ZrO2 with a group symmetry Fm-3m (225)-face centered cubic was identified. At the same time, it is observed that the films deposited in the reactive atmosphere show a pronounced amorphization, this most likely being due to the retention of nitrogen which leads to the modification of the network parameters.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":"5 16","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2022-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ovonic Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/jor.2022.186.759","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
To obtain ZrO2 and ZrO2+N2 thin films was used magnetron sputtering in radio frequency mode in a 10-6 mbar high vacuum deposition chamber. Silicon and carbon substrates measuring 12x15mm were used for deposition. The used magnetron system was composed of a single water-cooled cathode, provided with one circular targets of ZrO2 (2 mm thick and 50 mm in diameter) of high purity (99.95%). TDS Analysis of the films was performed. The desorbed species were observed with a QMG 220 Mass spectrometer provided with a W filament. It can be observed that in the case of the ZnO2 film, nitrogen desorption registers two maxima with signal intensity of 9.7x10-12 and 9.0x10-12, reached after 2000s and 4900s respectively. In the case of ZrO2+N2 film, nitrogen desorption shows a pronounced maximum with a signal intensity of 2.4x10-11 reached after 6000s. . The topology the ZrO2 and ZrO2+N2 samples deposited on Si substrates have been investigated by scanning electron microscopy (SEM) using a FEI Inspect S scanning electron microscope ( Hillsboro, Oregon, OR, USA) in high-vacuum modes. For the ZrO2 deposition, the surface appears to have grain-like topology, with a mean dimension of around 150 nm. These structures do not appear for the ZrO2+N2 deposition. Instead, for the ZrO2+N2 sample, small blisters (between 300 nm and 1.000nm) have formed on the surface, as a consequence of injecting N2 during the deposition. Cross-section measurements were also performed to establish the layer thickness. The ZrO2 sample has a measured thickness of 1950nm, while the introduction of N2 gas for the ZrO2+N2 sample had a poisoning effect on the magnetron target that led to a decrease (5 times) in deposition rate, giving this sample a final thickness of 365nm (compared to 1950nm) for the same deposition The crystalline structure was investigated using X-Ray Diffraction (XRD) method. The experimental set-up was composed of a diffractometer equipped with a Cu-Kα X-ray sourse, with a specific wavelength of 0.154nm, in a Bragg-Bretano type geometry. In this way, a crystalline phase corresponding to ZrO2 with a group symmetry Fm-3m (225)-face centered cubic was identified. At the same time, it is observed that the films deposited in the reactive atmosphere show a pronounced amorphization, this most likely being due to the retention of nitrogen which leads to the modification of the network parameters.
期刊介绍:
Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.