Design of Surface Plasmon Resonance–Based Solar Absorber Using Bloom-Shaped Au-InSb-Al Structure

Abstract

We have constructed the solar absorber in bloom design in three different layers: the ground layer, substrate layer, and resonator layer. The ground layer uses aluminum (Al), the substrate layer is INDIUM antimonide (InSb), and the bloom resonator is gold (Au). The proposed absorber can be used in the ultraviolet (UV) region, the violet (V) region, the near-infrared (NIR) region, and the middle-infrared (MIR) spectrums. The absorption rate in the UV, V, NIR, and MIR spectrums is 88.8%, 94.2%, 92.8%, and 89.2%, respectively. After final construction, the created structure has an average solar radiation rate of 92% throughout all four zones. At the 800 nm bandwidth, the absorption rate reaches more than 97%, and at the 1500 nm bandwidth, the absorber is above 95%. Step-by-step building and resulting absorption rate (A), reflectance rate (R), and transmittance rate (T) can be explored in each step. The solar radiation with the respective bandwidth range and AM 1.5 situation can be studied. The parameter converting of the ground layer width and ground layer thickness, the substrate layer thickness, and the resonator layer can be studied. Transverse electric mode (TE) and transverse magnetic mode TM can be studied by converting the degrees from 0 to 50° by 10° separation. The quantity of the electric field intensity in color variations can be illustrated. The comparison table of the current absorption rates of the other published works can be presented.