Computational fluid dynamics modeling of a wafer etch temperature control system

IF 3 Q2 ENGINEERING, CHEMICAL Digital Chemical Engineering Pub Date : 2023-09-01 DOI:10.1016/j.dche.2023.100102
Henrique Oyama , Kip Nieman , Anh Tran , Bernard Keville , Yewei Wu , Helen Durand
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引用次数: 2

Abstract

Next-generation etching processes for semiconductor manufacturing exploit the potential of a variety of operating conditions, including cryogenic conditions at which high etch rates of silicon and very low etch rates of the photoresist are achieved. Thus, tight control of wafer temperature must be maintained. However, large and fast changes in the operating conditions make the wafer temperature control very challenging to be performed using typical etch cooling systems. The selection and evaluation of control tunings, material, and operating costs must be considered for next-generation etching processes under different operating strategies. These evaluations can be performed using digital twin environments (which we define in this paper to be a model that captures the major characteristics expected of a typical industrial process). Motivated by this, this project discusses the development of a computational fluid dynamics (CFD) model of a wafer temperature control (WTC) system that we will refer to as a “digital twin” due to its ability to capture major characteristics of typical wafer temperature control processes. The steps to develop the digital twin using the fluid simulation software ANSYS Fluent are described. Mesh and time independence tests are performed with a subsequent benchmark of the proposed ANSYS model with etch cooling system responses that meet expectations of a typical industrial cooling system. In addition, to quickly test different operating strategies, we propose a reduced-order model in Python based on ANSYS simulation data that is much faster to simulate than the ANSYS model itself. The reduced-order model captures the major features of the WTC system demonstrated in the CFD simulation results. Once the operating strategy is selected, this could be implemented in the digital twin using ANSYS to view flow and temperature profiles in depth.

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晶圆蚀刻温度控制系统的计算流体动力学建模
半导体制造的下一代蚀刻工艺利用了各种操作条件的潜力,包括低温条件,在低温条件下,硅的高蚀刻速率和光刻胶的极低蚀刻速率可以实现。因此,必须严格控制晶圆片温度。然而,操作条件的巨大和快速变化使得使用典型的蚀刻冷却系统进行晶圆温度控制非常具有挑战性。在不同的操作策略下,下一代蚀刻工艺必须考虑控制调谐、材料和操作成本的选择和评估。这些评估可以使用数字孪生环境(我们在本文中将其定义为捕获典型工业过程预期的主要特征的模型)来执行。受此启发,本项目讨论了晶圆温度控制(WTC)系统的计算流体动力学(CFD)模型的发展,我们将其称为“数字孪生”,因为它能够捕捉典型晶圆温度控制过程的主要特征。介绍了利用流体仿真软件ANSYS Fluent开发数字孪生体的步骤。网格和时间无关的测试与随后的基准提出的ANSYS模型蚀刻冷却系统的响应,满足典型的工业冷却系统的期望进行。此外,为了快速测试不同的操作策略,我们在Python中提出了一个基于ANSYS仿真数据的降阶模型,该模型的仿真速度比ANSYS模型本身快得多。该降阶模型反映了CFD仿真结果中WTC系统的主要特征。一旦选择了操作策略,就可以使用ANSYS在数字双胞胎中实施,以深入查看流量和温度曲线。
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