Compositional dependence of physical parameters of Sb-doped InSe nanochalcogenide alloys

Abstract

ABSTRACT InSe is a III-VI semiconducting layered compound having potential applications in memories, solar cells, infrared sensors, switching devices and optical fibers. In this article various physical parameters of In0.1Se0.9-x Sb x (x = 0, 0.04, 0.08, 0.12) chalcogenide alloy depending on the varying composition of Se and Sb are discussed. The physical parameters include the theoretical calculations of average coordination number, number of constraints, floppy modes, number of lone pair electrons, deviation of stoichiometry, average heat of atomization, mean bond energy, density, molar volume, compactness, cohesive energy, electronegativity, energy band gap, conduction and valance band energy and glass transition temperature. The number of lone pair electrons and floppy modes is found to decrease, whereas the average coordination number, mean bond energy, average heat of atomization and density are found to increase with increasing Sb content. The theoretical values of glass transition temperature are calculated using the Tichy-Ticha and Lankhorst approach.