Layered MoS2 Grown on Anatase TiO2 {001} Promoting Interfacial Electron Transfer to Enhance Photocatalytic Evolution of H2 From H2S

Qing Cai, F. Wang, Jianglai Xiang, Meng Dan, Shan Yu, Ying Zhou
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引用次数: 1

Abstract

The treatment of hazardous hydrogen sulfide (H2S) via photocatalysis technology has been known as one of the most promising green technologies. Photocatalytic production of hydrogen (H2) from H2S by two-dimensional (2D) semiconductor materials has gathered great attention owing to its large surface area and high catalytic activity. In this work, layered MoS2 has been successfully grown on TiO2 {001} surface to fabricate the 2D MoS2/TiO2 {001} composites for H2 evolution from H2S, which can be confirmed by the X-ray diffraction (XRD) and transmission electron microscopy (TEM) tests. Band structures and UV-Vis spectra provide important evidences that MoS2 loading can significantly narrow the band gap and broaden the light absorbance into the visible light region. Electron transfer is obviously visualized at the interface of MoS2/TiO2, resulting in the built-in potential from TiO2 to MoS2, which is determined by the density functional theory (DFT) calculations and X-ray photoelectron spectroscopy (XPS) test. Consequently, the photo-induced electrons and holes are accumulated at the sides of TiO2 and MoS2 under the illumination, respectively, which largely promote the interfacial electron transfer and prolong the lifetime of photo-generated electrons that participate in the photocatalytic reactions of H2 evolution from H2S. This efficient separation of photo-induced carriers can be further proved by photoluminescence (PL) spectra, photocurrent responses, and electrochemical impedance spectra. As a result, the photocatalytic activity of H2 evolution is largely increased by 9.4 times compared to the pristine TiO2. This study could offer a new and facile way to design highly efficient 2D photocatalysts for the application of H2S treatment.
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在锐钛矿TiO2{001}上生长层状MoS2促进界面电子转移以增强H2S光催化生成H2
通过光催化技术处理危险的硫化氢(H2S)被认为是最有前途的绿色技术之一。二维(2D)半导体材料以其大的表面积和高的催化活性,从H2S中光催化生产氢气(H2)引起了人们的极大关注。在这项工作中,在TiO2{001}表面成功地生长了层状MoS2,以制备用于从H2S析氢的2D MoS2/TiO2{001}复合材料,这可以通过X射线衍射(XRD)和透射电子显微镜(TEM)测试来证实。能带结构和UV-Vis光谱提供了重要的证据,证明MoS2负载可以显著缩小带隙,并将光吸收加宽到可见光区域。密度泛函理论(DFT)计算和X射线光电子能谱(XPS)测试表明,在MoS2/TiO2的界面上可以明显地观察到电子转移,从而产生从TiO2到MoS2的内建电势。因此,在光照下,光诱导的电子和空穴分别积聚在TiO2和MoS2的侧面,这在很大程度上促进了界面电子转移,并延长了参与H2S析氢光催化反应的光生电子的寿命。光致发光(PL)光谱、光电流响应和电化学阻抗光谱可以进一步证明光诱导载流子的这种有效分离。结果,与原始TiO2相比,H2释放的光催化活性大大提高了9.4倍。该研究为设计用于H2S处理的高效2D光催化剂提供了一种新的简便方法。
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