Quasi-one-dimensional topological material Bi4X4(X=Br,I)

IF 7.7 2区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY Advances in Physics: X Pub Date : 2022-04-12 DOI:10.1080/23746149.2022.2057234
Junfeng Han, W. Xiao, Yugui Yao
{"title":"Quasi-one-dimensional topological material Bi4X4(X=Br,I)","authors":"Junfeng Han, W. Xiao, Yugui Yao","doi":"10.1080/23746149.2022.2057234","DOIUrl":null,"url":null,"abstract":"ABSTRACT Bismuth halogenides, a family of quasi-one-dimensional (1D) materials, including α and α phases of Bi4Br4 and Bi4I4, have been predicted to exhibit rich and interesting topological properties. The single layer of Bi4Br4 was demonstrated to be a quantum spin Hall insulator (QSHI) with a 0.18 eV gap. Such a band gap is large enough for the observation of QSHI at room temperature. Bulk α-Bi4Br4 was categorized as a higher-order topological insulator and was soon examined in experiments. In addition, the α-Bi4Br4 exhibit simultaneously the topological phase and superconductive phase under 3.8–4.3 GPa pressure. While the single layer of Bi4I4 was shown to be close to the critical point of the QSHI/trivial-insulator phase transition, the α-Bi4I4 was considered to be a strong or weak topological insulator. In this work, we reviewed the recent progress in the topological properties of bismuth halogenides, including the theoretical calculations, angle-resolved photoemission spectroscopy, scanned tunneling microscopy analyses, quantum transport measurement and the superconducting phase transfer under pressure. We expect further research of this family material about the non-trivial superconductor and possible Majorana, room-temperature quantum transport effect and potential application in the quantum device for the electronics and information technology. Graphical Abstract","PeriodicalId":7374,"journal":{"name":"Advances in Physics: X","volume":" ","pages":""},"PeriodicalIF":7.7000,"publicationDate":"2022-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Physics: X","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/23746149.2022.2057234","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 2

Abstract

ABSTRACT Bismuth halogenides, a family of quasi-one-dimensional (1D) materials, including α and α phases of Bi4Br4 and Bi4I4, have been predicted to exhibit rich and interesting topological properties. The single layer of Bi4Br4 was demonstrated to be a quantum spin Hall insulator (QSHI) with a 0.18 eV gap. Such a band gap is large enough for the observation of QSHI at room temperature. Bulk α-Bi4Br4 was categorized as a higher-order topological insulator and was soon examined in experiments. In addition, the α-Bi4Br4 exhibit simultaneously the topological phase and superconductive phase under 3.8–4.3 GPa pressure. While the single layer of Bi4I4 was shown to be close to the critical point of the QSHI/trivial-insulator phase transition, the α-Bi4I4 was considered to be a strong or weak topological insulator. In this work, we reviewed the recent progress in the topological properties of bismuth halogenides, including the theoretical calculations, angle-resolved photoemission spectroscopy, scanned tunneling microscopy analyses, quantum transport measurement and the superconducting phase transfer under pressure. We expect further research of this family material about the non-trivial superconductor and possible Majorana, room-temperature quantum transport effect and potential application in the quantum device for the electronics and information technology. Graphical Abstract
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准一维拓扑材料Bi4X4(X=Br,I)
卤代铋是一类准一维(1D)材料,包括Bi4Br4和Bi4I4的α相和α相,具有丰富而有趣的拓扑性质。单层Bi4Br4被证明是一个量子自旋霍尔绝缘体(QSHI),隙为0.18 eV。这样的带隙足够大,可以在室温下观测QSHI。体α-Bi4Br4被归类为高阶拓扑绝缘体,并很快在实验中得到验证。此外,α-Bi4Br4在3.8 ~ 4.3 GPa压力下同时表现出拓扑相和超导相。虽然单层Bi4I4被证明接近QSHI/琐细绝缘子相变的临界点,但α-Bi4I4被认为是强或弱拓扑绝缘子。本文综述了近年来卤化铋拓扑性质的研究进展,包括理论计算、角分辨光发射光谱、扫描隧道显微镜分析、量子输运测量和压力下超导相转移。我们期待着该家族材料在非平凡超导体和可能的马约拉纳、室温量子输运效应以及在电子和信息技术量子器件中的潜在应用等方面的进一步研究。图形抽象
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来源期刊
Advances in Physics: X
Advances in Physics: X Physics and Astronomy-General Physics and Astronomy
CiteScore
13.60
自引率
0.00%
发文量
37
审稿时长
13 weeks
期刊介绍: Advances in Physics: X is a fully open-access journal that promotes the centrality of physics and physical measurement to modern science and technology. Advances in Physics: X aims to demonstrate the interconnectivity of physics, meaning the intellectual relationships that exist between one branch of physics and another, as well as the influence of physics across (hence the “X”) traditional boundaries into other disciplines including: Chemistry Materials Science Engineering Biology Medicine
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