Epitaxial ferroelectric memristors integrated with silicon

IF 4.1 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Frontiers in Nanotechnology Pub Date : 2022-12-16 DOI:10.3389/fnano.2022.1092177
Miguel Rengifo, M.H. Aguirre, M. Sirena, U. Lüders, D. Rubi
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Abstract

Neuromorphic computing requires the development of solid-state units able to electrically mimic the behavior of biological neurons and synapses. This can be achieved by developing memristive systems based on ferroelectric oxides. In this work we fabricate and characterize high quality epitaxial BaTiO3-based memristors integrated with silicon. After proving the ferroelectric character of BaTiO3 we tested the memristive response of LaNiO3/BaTiO3/Pt microstructures and found a complex behavior which includes the co-existence of volatile and non-volatile effects, arising from the modulation of the BaTiO3/Pt Schottky interface by the direction of the polarization coupled to oxygen vacancy electromigration to/from the interface. This produces remanent resistance loops with tunable ON/OFF ratio and asymmetric resistance relaxations. These properties might be harnessed for the development of neuromorphic hardware compatible with existing silicon-based technology.
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与硅集成的外延铁电忆阻器
神经形态计算需要发展出能够在电上模拟生物神经元和突触行为的固态单元。这可以通过开发基于铁电氧化物的忆阻系统来实现。在这项工作中,我们制造和表征了高质量的外延batio3基硅集成忆阻器。在证明了BaTiO3的铁电特性后,我们测试了LaNiO3/BaTiO3/Pt微观结构的记忆响应,发现了一种复杂的行为,包括挥发性和非挥发性效应共存,这是由极化方向耦合到界面的氧空位电迁移引起的。这产生了可调的开/关比和不对称电阻松弛的剩余电阻回路。这些特性可能被用于开发与现有硅基技术兼容的神经形态硬件。
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来源期刊
Frontiers in Nanotechnology
Frontiers in Nanotechnology Engineering-Electrical and Electronic Engineering
CiteScore
7.10
自引率
0.00%
发文量
96
审稿时长
13 weeks
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