The role of overlayered nitride electro-materials for N2 reduction to ammonia

Younes Abghoui, Atef Iqbal, Egill Skúlason
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引用次数: 1

Abstract

Following our previous report on N2 reduction reaction (NRR) on the surface of nitrides, we investigated the influence of incorporation of titanium nitride as a stable and inactive-NRR material into the structure of DFT-predicted NRR-active surfaces of chromium, vanadium, niobium, and zirconium nitrides. The outcome of our density functional theory (DFT) based analyses suggests that combination of titanium nitride with vanadium nitride can enhance the potential-determining step of the reaction with up to 20% compared to pure vanadium nitride while maintaining similar number of proton-electron transfer steps for formation of two ammonia molecules. The influence of titanium nitride on chromium nitride is expected to be more pronounced as rate-determining step associated with nitrogen adsorption on the vacancy and regeneration of the catalyst improves by around 90% compared to the pure chromium nitride. This effect on niobium and zirconium nitride is, however, negative as the potential-determining step becomes larger for the case of niobium nitride, and the reaction pathway changes from nitrogen reduction to hydrogen evolution for the case of zirconium nitride. These results not only encourage experimentalists to explore these overlayered structures further in experiments, but it also opens up the avenue for considering the alloys and dopants of these nitrides via both density functional theory modelling and experiments.
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叠层氮化物电材料在N2还原为氨中的作用
根据我们之前关于氮化物表面N2还原反应(NRR)的报告,我们研究了氮化钛作为一种稳定且无活性的NRR材料掺入到DFT预测的铬、钒、铌和锆氮化物的NRR活性表面的结构中的影响。我们基于密度泛函理论(DFT)的分析结果表明,与纯氮化钒相比,氮化钛和氮化钒的组合可以将反应的电位决定步骤提高20%,同时保持形成两个氨分子的质子-电子转移步骤的相似数量。氮化钛对氮化铬的影响预计将更加明显,因为与氮在空位上的吸附和催化剂的再生相关的速率决定步骤与纯氮化铬相比提高了约90%。然而,对铌和氮化锆的这种影响是负面的,因为对于氮化铌的情况,电势决定步骤变得更大,并且对于氮化锆的情况,反应途径从氮还原变为析氢。这些结果不仅鼓励实验人员在实验中进一步探索这些叠层结构,而且为通过密度泛函理论建模和实验来考虑这些氮化物的合金和掺杂剂开辟了途径。
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