Ensemble Negatively-Charged Nitrogen-Vacancy Centers in Type-Ib Diamond Created by High Fluence Electron Beam Irradiation

IF 1.3 Q3 INSTRUMENTS & INSTRUMENTATION Quantum Beam Science Pub Date : 2021-12-30 DOI:10.3390/qubs6010002

Shuya Ishii, Seiichi Saiki, S. Onoda, Y. Masuyama, H. Abe, T. Ohshima

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引用次数: 6

Abstract

Electron beam irradiation into type-Ib diamond is known as a good method for the creation of high concentration negatively-charged nitrogen-vacancy (NV−) centers by which highly sensitive quantum sensors can be fabricated. In order to understand the creation mechanism of NV− centers, we study the behavior of substitutional isolated nitrogen (P1 centers) and NV− centers in type-Ib diamond, with an initial P1 concentration of 40–80 ppm by electron beam irradiation up to 8.0 × 1018 electrons/cm2. P1 concentration and NV− concentration were measured using electron spin resonance and photoluminescence measurements. P1 center count decreases with increasing irradiation fluence up to 8.0 × 1018 electrons/cm2. The rate of decrease in P1 is slightly lower at irradiation fluence above 4.0 × 1018 electrons/cm2 especially for samples of low initial P1 concentration. Comparing concentration of P1 centers with that of NV− centers, it suggests that a part of P1 centers plays a role in the formation of other defects. The usefulness of electron beam irradiation to type-Ib diamonds was confirmed by the resultant conversion efficiency from P1 to NV− center around 12–19%.

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高通量电子束辐照制备的Ib型金刚石中带负电的氮空位中心系综

电子束辐照到ib型金刚石是一种产生高浓度负电荷氮空位(NV−)中心的好方法，通过这种方法可以制造高灵敏度的量子传感器。为了了解NV -中心的形成机制，我们在初始P1浓度为40-80 ppm的条件下，通过8.0 × 1018个电子/cm2的电子束辐照，研究了取代分离氮(P1中心)和NV -中心在ib型金刚石中的行为。通过电子自旋共振和光致发光测量P1浓度和NV−浓度。P1中心计数随辐照量的增加而减小，辐照量可达8.0 × 1018电子/cm2。当辐照通量大于4.0 × 1018电子/cm2时，P1的下降速率略低，特别是对于初始P1浓度较低的样品。对比P1中心和NV -中心的浓度，可以发现部分P1中心在其他缺陷的形成中起作用。从P1到NV -中心的转换效率约为12-19%，证实了电子束辐照对ib型金刚石的有用性。

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