The Validation of Various Technological Factors Impact on the Electron Beam Lithography Process

IF 0.5 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Advances in Electrical and Electronic Engineering Pub Date : 2021-06-30 DOI:10.15598/aeee.v19i2.4133
A. Zawadzka, Kornelia Indykiewic, R. Paszkiewicz
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引用次数: 1

Abstract

One of the most significant processes in micro- and nanoelectronics technology is Electron Beam Lithography (EBL). This technique maintains a leading role in extremely high-resolution structures fabrication process with micro- and nanometer dimensions down to dozens of nanometers. The EBL is a highly complex process and determining fundamental technological factors that affect the final pattern shape is crucial. One of them is the used lithography system, consisting of a substrate and a polymer layer that affects the electron scattering effects. To obtain the required pattern geometry, it is also necessary to properly select the electron beam parameters for given materials. The aim of this work is to discuss the differences in the exposition process for various accelerating voltage (EHT) values. Additionally, the investigation of geometry features and the impact of the exposure dose and the structure dimensions on the final absorbed energy distribution profile in the resist layer is presented and discussed. Numerical studies, using CASINO software and Monte Carlo method, are presented to compare the energy distribution in the polymer that affects the structure formation in the resist layer.
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影响电子束光刻工艺的各种工艺因素的验证
电子束光刻(EBL)是微纳电子技术中最重要的工艺之一。该技术在微米和纳米级的超高分辨率结构制造工艺中保持领先地位。EBL是一个高度复杂的过程,确定影响最终图案形状的基本技术因素是至关重要的。其中之一是使用的光刻系统,由衬底和影响电子散射效应的聚合物层组成。为了获得所需的图形几何形状,还需要适当地选择给定材料的电子束参数。这项工作的目的是讨论不同加速电压(EHT)值的暴露过程的差异。此外,还研究了抗蚀剂层的几何特性以及暴露剂量和结构尺寸对最终吸收能量分布曲线的影响。利用CASINO软件和蒙特卡罗方法进行数值研究,比较了聚合物中的能量分布对抗蚀层结构形成的影响。
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来源期刊
Advances in Electrical and Electronic Engineering
Advances in Electrical and Electronic Engineering ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
33.30%
发文量
30
审稿时长
25 weeks
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