Raman Spectroscopy Investigation on Semi-curve Woven Fabric-graphene Synthesized by the Chemical Vapor Deposition Process

Abstract

Abstract: Graphene is a single layer of two-dimensional carbon atoms bound in a hexagonal lattice structure with zero band gap semiconductor. Chemical vapor deposition (CVD) is one of the most promising, inexpensive and readily ways for synthesizing monolayer pristine graphene. We have synthesized monolayer graphene shaped in semi-curve woven frabic-graphene (SWF-G) on SiO2/Si substrate. Using Raman spectroscopy, we studied the central suspended portion (i.e., 1-6) of it exerting compression (stress) to the graphene supported on the substrate. The concentration of hole impurities on either side of the central position of semi-curve woven fabric-graphene (SWF-G) is more than on its central position. The variation of such hole doping concentration results in an upshift of 2D peak position (pos(2D)) which is opposite for high electron doping even if there is no intentional control of doping. The synthesized graphene is a single-layer high-quality new structure graphene. Keywords: Semi-curve woven fabric-graphene, Raman spectroscopy, Charge impurities, Compression, Doping.