Editorial: The molecular underpinnings of nanoscale semiconductor synthesis

IF 4.1 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Frontiers in Nanotechnology Pub Date : 2023-06-06 DOI:10.3389/fnano.2023.1229232
H. Ripberger, Samantha M Harvey, B. Cossairt
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Abstract

Colloidal semiconductor nanocrystals have attracted considerable attention over the past several decades due to their size-dependent optoelectronic properties, which have driven their integration into cutting-edge applications ranging from LEDs and displays to quantum computing and biosensing. The utility of these materials stems from their solution processability, broad absorption profiles, narrow photoluminescence emission, and surfaces that can be easily modulated. Wet chemical synthesis of these materials provides a versatile space for development of new compositions, morphologies, heterostructures, and coordination environments simply by changing precursors, ligands, concentrations, and temperatures. Mechanistic studies into molecular and cluster intermediates during formation can direct researchers towards better control over synthetic outcomes. Furthermore, the high surface to volume ratios inherent to nanocrystals makes the study of their surfaces and their stabilizing ligands particularly important, with surface accessibility controlling reaction and charge transfer rates in catalytic applications and photovoltaics. We organized this Research Topic to highlight some of the recent advances in the field of nanocrystal synthesis. We are particularly interested in understanding the reactions that make and modify nanocrystals at the atomic level, including precursor conversion, ligand exchange, and cluster formation and dissolution. By understanding the molecular underpinnings of nanoscale semiconductor synthesis, it becomes possible to control end products and their properties. Precursor reactivity gates the nucleation and growth of nanocrystals in colloidal syntheses. In the synthesis of WSe2, tungsten hexacarbonyl is often used as the metal precursor, which typically requires high reaction temperatures to force the cleavage of the strongW–CO bond. Schimpf and colleagues demonstrate thatW–CO bond labilization, and hence the availability of tungsten metal for subsequent monomer formation, can be tuned through the inclusion of common ligands such as trioctylphosphine (TOP) and trioctylphosphine oxide (TOPO) (Geisenhoff et al.). Using IR spectroscopy for reaction monitoring in the presence of TOPO, the authors noted W(CO)6 rapidly decomposes into W(CO)6-x(TOPO)x, which promoted rapid nucleation of WSe2 nanocrystals and lower reaction temperatures. The structural assignment of this intermediate was corroborated through the growth of a diffraction-quality single crystal of the triarylphosphine analogue W(CO)5(TPPO) (TPPO = triphenylphosphine oxide). On the other hand, the use of strongly coordinating triphenylphosphine (TPP) was found to sequester tungsten as W(CO)5(TPP), OPEN ACCESS
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社论:纳米级半导体合成的分子基础
在过去的几十年里,胶体半导体纳米晶体由于其与尺寸相关的光电特性而引起了相当大的关注,这促使它们集成到从led和显示器到量子计算和生物传感等尖端应用中。这些材料的实用性源于它们的溶液可加工性、宽吸收谱、窄光致发光发射以及易于调制的表面。这些材料的湿化学合成为开发新的成分、形态、异质结构和配位环境提供了一个多用途的空间,只需改变前体、配体、浓度和温度。对形成过程中分子和簇状中间体的机理研究可以指导研究人员更好地控制合成结果。此外,纳米晶体固有的高表面体积比使得对其表面及其稳定配体的研究尤为重要,表面可及性控制催化应用和光伏中的反应和电荷转移速率。我们组织了这个研究主题,以突出纳米晶体合成领域的一些最新进展。我们特别感兴趣的是理解在原子水平上制造和修饰纳米晶体的反应,包括前体转化、配体交换、簇的形成和溶解。通过了解纳米级半导体合成的分子基础,可以控制最终产品及其性质。在胶体合成中,前驱体的反应性决定了纳米晶体的成核和生长。在WSe2的合成中,通常使用六羰基钨作为金属前驱体,这通常需要较高的反应温度来迫使强w - co键断裂。Schimpf及其同事证明,w - co键的稳定性,以及随后形成单体的钨金属的可用性,可以通过包含三辛基膦(TOP)和三辛基膦氧化物(TOPO)等常见配体来调节(Geisenhoff等人)。在TOPO存在的情况下,利用红外光谱监测反应,作者注意到W(CO)6迅速分解成W(CO)6-x(TOPO)x,这促进了WSe2纳米晶体的快速成核和降低了反应温度。该中间体的结构分配通过三苯基磷化氢类似物W(CO)5(TPPO) (TPPO =三苯基氧化磷化氢)的衍射质量单晶的生长得到证实。另一方面,使用强配位的三苯基膦(TPP)可以将钨隔离为W(CO)5(TPP), OPEN ACCESS
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Frontiers in Nanotechnology
Frontiers in Nanotechnology Engineering-Electrical and Electronic Engineering
CiteScore
7.10
自引率
0.00%
发文量
96
审稿时长
13 weeks
期刊最新文献
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