Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements

IF 0.8 Q3 STATISTICS & PROBABILITY Monte Carlo Methods and Applications Pub Date : 2020-10-30 DOI:10.1515/mcma-2020-2077
E. Kablukova, K. Sabelfeld, D. Y. Protasov, K. Zhuravlev
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引用次数: 2

Abstract

Abstract Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations.
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GaN半导体漂移速度的蒙特卡罗模拟及其与实验测量的比较
摘要发展了蒙特卡罗算法来模拟半导体中的电子输运。特别地,计算了GaN半导体中的漂移速度,并与实验测量结果进行了比较。给出了电子在极性光学和谷间声子上的散射概率、散射角分布以及声变形势的显式表达式。模拟结果和实验测量结果的良好一致性表明,M-L谷位于0.7 eV高于Γ-谷。这个值与其他实验研究一致,但与从头计算相比更低。
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来源期刊
Monte Carlo Methods and Applications
Monte Carlo Methods and Applications STATISTICS & PROBABILITY-
CiteScore
1.20
自引率
22.20%
发文量
31
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