Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate

IF 2.2 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Letters: X Pub Date : 2022-06-01 DOI:10.1016/j.mlblux.2022.100149

Hiroyuki Nishinaka , Osamu Ueda , Noriaki Ikenaga , Noriyuki Hasuike , Masahiro Yoshimoto

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引用次数: 1

Abstract

Ga₂O₃ has attracted significant attention for various applications such as power-switching applications and deep-ultraviolet optoelectronics. In this study, we demonstrated a lattice-matching κ-(In₁₋_xGa_x)₂O₃ thin film grown on an ε-GaFeO₃ substrate via the mist chemical vapor deposition process. The X-ray diffraction peak of the thin film was almost coincident with that of the substrate and exhibited Laue oscillations. Atomic force microscopy revealed that the surface of the κ-(In₁₋_xGa_x)₂O₃ thin film exhibited a step-terrace morphology and was atomically flat. The selected area electron diffraction of transmission electron microscopy showed that the diffraction spots of the thin film and substrate overlapped, indicating that the thin film was almost lattice-matched with the substrate. We believe that the lattice-matched κ-(In₁₋_xGa_x)₂O₃ thin film with an ε-GaFeO₃ substrate will contribute significantly to the demonstration of ferroelectric κ-Ga₂O₃ based high electron mobility transistors.

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ε-GaFeO3衬底晶格匹配掺铟κ-Ga2O3薄膜的生长

Ga2O3在功率开关和深紫外光电子等方面的应用引起了人们的广泛关注。在本研究中，我们通过雾状化学气相沉积工艺在ε-GaFeO3衬底上生长了晶格匹配的κ-(In1−xGax)2O3薄膜。薄膜的x射线衍射峰与衬底的x射线衍射峰基本重合，呈现劳厄振荡。原子力显微镜观察发现，κ-(In1−xGax)2O3薄膜表面呈阶梯状，呈原子平面。透射电镜选择区域电子衍射显示，薄膜与衬底的衍射斑点重叠，表明薄膜与衬底几乎是晶格匹配的。我们认为，以ε-GaFeO3为衬底的晶格匹配κ-(In1−xGax)2O3薄膜将有助于证明基于铁电κ- ga2o3的高电子迁移率晶体管。

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