Evaluation of Dynamic Triple Modular Redundancy in an Interleaved-Multi-Threading RISC-V Core

IF 1.6 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Low Power Electronics and Applications Pub Date : 2022-12-28 DOI:10.3390/jlpea13010002
Marcello Barbirotta, Abdallah Cheikh, A. Mastrandrea, F. Menichelli, M. Ottavi, M. Olivieri
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引用次数: 4

Abstract

Functional safety is a key requirement in several application domains in which microprocessors are an essential part. A number of redundancy techniques have been developed with the common purpose of protecting circuits against single event upset (SEU) faults. In microprocessors, functional redundancy may be achieved through multi-core or simultaneous-multi-threading architectures, with techniques that are broadly classifiable as Double Modular Redundancy (DMR) and Triple Modular Redundancy (TMR), involving the duplication or triplication of architecture units, respectively. RISC-V plays an interesting role in this context for its inherent extendability and the availability of open-source microarchitecture designs. In this work, we present a novel way to exploit the advantages of both DMR and TMR techniques in an Interleaved-Multi-Threading (IMT) microprocessor architecture, leveraging its replicated threads for redundancy, and obtaining a system that can dynamically switch from DMR to TMR in the case of faults. We demonstrated the approach for a specific family of RISC-V cores, modifying the microarchitecture and proving its effectiveness with an extensive RTL fault-injection simulation campaign.
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交错多线程RISC-V内核动态三模冗余评估
在许多应用领域中,功能安全是一个关键要求,而微处理器是这些应用领域的重要组成部分。为了保护电路免受单事件干扰(SEU)故障的影响,已经开发了许多冗余技术。在微处理器中,功能冗余可以通过多核或同步多线程架构实现,其技术大致可分为双模块冗余(DMR)和三模块冗余(TMR),分别涉及架构单元的复制或三倍。RISC-V由于其固有的可扩展性和开源微架构设计的可用性,在这种情况下扮演了一个有趣的角色。在这项工作中,我们提出了一种在交错多线程(IMT)微处理器架构中利用DMR和TMR技术优势的新方法,利用其复制线程冗余,并获得了一个可以在故障情况下从DMR动态切换到TMR的系统。我们针对特定的RISC-V内核系列演示了该方法,修改了微架构,并通过广泛的RTL故障注入模拟活动证明了其有效性。
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来源期刊
Journal of Low Power Electronics and Applications
Journal of Low Power Electronics and Applications Engineering-Electrical and Electronic Engineering
CiteScore
3.60
自引率
14.30%
发文量
57
审稿时长
11 weeks
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