Monte Carlo Simulation of Charge Carriers Diffusion in a Nonhomogeneous Medium with a Nonuniform Temperature

Abstract

Abstract We explore a different aspect of handling the transport (mobility) of charge carriers (electrons) in a doped semiconductor layer under thermal stress. The traps are nonhomogeneously distributed such that denser around the center. Such type of traps distribution biases the electrons to concentrate around the center. Putting on the system to a nonuniform hot temperature around the center makes the electrons to diffuse out of the central region. However, the effect of traps dispersion provides a new distribution of electrons around two points. Then applying a monostable external potential around the center results increasing of the distribution of electrons around these points. In this numerical study, the electrons distribution is regulated by changing the traps distribution, depth of trap potential and strength of the external potential. In comparison with the previous work [Aragie et al. (2014). Eur. Phys. J. B 87:214], we found a strong distribution of charge carriers around the nearby region.