{"title":"A 0.6 V Bulk-Driven Class-AB Two-Stage OTA with Non-Tailed Differential Pair","authors":"A. Ballo, A. D. Grasso, S. Pennisi","doi":"10.3390/jlpea13020024","DOIUrl":null,"url":null,"abstract":"This work presents a two-stage operational transconductance amplifier suitable for sub-1 V operation. This characteristic is achieved thanks to the adoption of a bulk-driven non-tailed differential pair. Local positive feedback is exploited to boost the equivalent transconductance of the first stage and the quasi-floating gate approach enables the class AB operation of the second stage. Implemented in a standard 180 nm CMOS technology and supplied at 0.6 V, the amplifier exhibits a 350 kHz gain bandwidth product and a phase margin of 69° while driving a 150 pF load. Compared to other solutions in the literature, the proposed one exhibits a considerable performance improvement, especially for large signal operation.","PeriodicalId":38100,"journal":{"name":"Journal of Low Power Electronics and Applications","volume":" ","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2023-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Low Power Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/jlpea13020024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents a two-stage operational transconductance amplifier suitable for sub-1 V operation. This characteristic is achieved thanks to the adoption of a bulk-driven non-tailed differential pair. Local positive feedback is exploited to boost the equivalent transconductance of the first stage and the quasi-floating gate approach enables the class AB operation of the second stage. Implemented in a standard 180 nm CMOS technology and supplied at 0.6 V, the amplifier exhibits a 350 kHz gain bandwidth product and a phase margin of 69° while driving a 150 pF load. Compared to other solutions in the literature, the proposed one exhibits a considerable performance improvement, especially for large signal operation.