Zhenhao Sun, N. Tang, Shixiong Zhang, Shuai Chen, Xingchen Liu, B. Shen
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引用次数: 0
Abstract
ABSTRACT GaN-based semiconductors are deemed to be a potential candidate for developing spintronic devices owing to the artificially controllable spin-orbit coupling and the high Curie temperature of GaN-based diluted magnetic semiconductors. Spin injection, spin relaxation dynamics, and spin manipulation are the key issues in the development of GaN-based spintronic devices, which have been reviewed in this article. In the end, a brief section presents the research progress of GaN-based spintronic devices. Graphical Abstract
期刊介绍：
Advances in Physics: X is a fully open-access journal that promotes the centrality of physics and physical measurement to modern science and technology. Advances in Physics: X aims to demonstrate the interconnectivity of physics, meaning the intellectual relationships that exist between one branch of physics and another, as well as the influence of physics across (hence the “X”) traditional boundaries into other disciplines including:
Chemistry
Materials Science
Engineering
Biology
Medicine
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