{"title":"Optical and electrical properties of Nd-doped ZnO films prepared by sol-gel method","authors":"H. He, Zuoli He, Q. Shen","doi":"10.1504/IJNM.2017.10008406","DOIUrl":null,"url":null,"abstract":"ZnO films doped with Nd contents of 0%-0.81% were deposited by a chemical solution deposition and characterised by X-ray diffraction, field emission scanning electron microscopy, UV-vis and luminescent spectrophotometry and electrical measurement. The experiments revealed that the films have nano-scale particle size that increased with increasing Nd content. The Nd doping resulted in the obvious variations of transmittance in the UV-visible light range, the band gap and resistivity. Thin film showed an optimal optical and electrical properties at Nd content of 0.42%. The films also showed a strong band gap emission and a very weak emission related to intrinsic defect.","PeriodicalId":14170,"journal":{"name":"International Journal of Nanomanufacturing","volume":"13 1","pages":"295"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Nanomanufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1504/IJNM.2017.10008406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
ZnO films doped with Nd contents of 0%-0.81% were deposited by a chemical solution deposition and characterised by X-ray diffraction, field emission scanning electron microscopy, UV-vis and luminescent spectrophotometry and electrical measurement. The experiments revealed that the films have nano-scale particle size that increased with increasing Nd content. The Nd doping resulted in the obvious variations of transmittance in the UV-visible light range, the band gap and resistivity. Thin film showed an optimal optical and electrical properties at Nd content of 0.42%. The films also showed a strong band gap emission and a very weak emission related to intrinsic defect.
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