Research progress of high power semiconductor laser pump source

Q4 Engineering 强激光与粒子束 Pub Date : 2020-12-15 DOI:10.11884/HPLPB202032.200236
M. Xiaoyu, Zhang Naling, Zhong Li, Liu Suping, Jing Hongqi
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引用次数: 5

Abstract

High power semiconductor lasers are the main pump source for solid-state lasers and fiber lasers. The improvement in the performance of laser pump sources directly promotes the development of solid-state lasers, fiber lasers and other lasers. The article introduces the latest research progress of 8xx nm and 9xx nm semiconductor laser pump sources. The output power research level of 8xx nm single-emitter laser has reached 18.8 W@95 µm, the output power research level of 8xx nm laser bar has reached 1.8 kW(QCW), the output power research level of 9xx nm single-emitter laser has reached 35 W@100 µm, the output power research level of 9xx nm laser bar has reached 1.98 kW(QCW). The output power of a narrow linewidth semiconductor laser with a linewidth <1 nm can reach 14 W. The development trend of semiconductor laser pump source in the future is forecasted.
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高功率半导体激光泵浦源研究进展
高功率半导体激光器是固态激光器和光纤激光器的主要泵浦源。激光泵浦源性能的提高,直接推动了固态激光器、光纤激光器等激光器的发展。本文介绍了8xx nm和9xx nm半导体激光泵浦源的最新研究进展。8xx nm单发射器激光器输出功率研究水平已达到18.8 W@95µm, 8xx nm激光棒输出功率研究水平已达到1.8 kW(QCW), 9xx nm单发射器激光器输出功率研究水平已达到35 W@100µm, 9xx nm激光棒输出功率研究水平已达到1.98 kW(QCW)。线宽<1 nm的窄线宽半导体激光器输出功率可达14 W。展望了半导体激光泵浦源未来的发展趋势。
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来源期刊
强激光与粒子束
强激光与粒子束 Engineering-Electrical and Electronic Engineering
CiteScore
0.90
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0.00%
发文量
11289
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