A ±4-A High-Side Current Sensor With 0.9% Gain Error From −40 °C to 85 °C Using an Analog Temperature Compensation Technique

IF 5.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Solid-state Circuits Pub Date : 2018-10-23 DOI:10.1109/JSSC.2018.2875106
Long Xu;Johan H. Huijsing;Kofi A. A. Makinwa
{"title":"A ±4-A High-Side Current Sensor With 0.9% Gain Error From −40 °C to 85 °C Using an Analog Temperature Compensation Technique","authors":"Long Xu;Johan H. Huijsing;Kofi A. A. Makinwa","doi":"10.1109/JSSC.2018.2875106","DOIUrl":null,"url":null,"abstract":"This paper presents a fully integrated shunt-based current sensor that supports a 25-V input common-mode range while operating from a single 1.5-V supply. It uses a high-voltage beyond-the-rails ADC to directly digitize the voltage across an on-chip shunt resistor. To compensate for the shunt's large temperature coefficient of resistance (~0.335%/°C), the ADC employs a proportional-to-absolute-temperature voltage reference. This analog compensation scheme obviates the need for the explicit temperature sensor and calibration logic required by digital compensation schemes. The sensor achieves 1.5-V noise over a 2-ms conversion time while drawing only 10.9 μA from a 1.5-V supply. Over a ±4-A range, and after a one-point trim, the sensor exhibits a 0.9% (maximum) gain error from -40 °C to 85 °C and a 0.05% gain error at room temperature.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"53 12","pages":"3368-3376"},"PeriodicalIF":5.6000,"publicationDate":"2018-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/JSSC.2018.2875106","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/8502850/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 11

Abstract

This paper presents a fully integrated shunt-based current sensor that supports a 25-V input common-mode range while operating from a single 1.5-V supply. It uses a high-voltage beyond-the-rails ADC to directly digitize the voltage across an on-chip shunt resistor. To compensate for the shunt's large temperature coefficient of resistance (~0.335%/°C), the ADC employs a proportional-to-absolute-temperature voltage reference. This analog compensation scheme obviates the need for the explicit temperature sensor and calibration logic required by digital compensation schemes. The sensor achieves 1.5-V noise over a 2-ms conversion time while drawing only 10.9 μA from a 1.5-V supply. Over a ±4-A range, and after a one-point trim, the sensor exhibits a 0.9% (maximum) gain error from -40 °C to 85 °C and a 0.05% gain error at room temperature.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
采用模拟温度补偿技术的±4-A高侧电流传感器,在−40°C至85°C范围内增益误差为0.9%
本文介绍了一种完全集成的基于分流器的电流传感器,该传感器支持25-V输入共模范围,同时使用单个1.5-V电源工作。它使用轨外高压ADC直接数字化片上分流电阻器上的电压。为了补偿分流器的大电阻温度系数(约0.335%/°C),ADC采用与绝对温度成比例的参考电压。这种模拟补偿方案消除了对数字补偿方案所需的显式温度传感器和校准逻辑的需要。传感器在2毫秒的转换时间内实现1.5伏的噪声,而从1.5伏的电源中只提取10.9$\mu\text{a}$。在±4-a范围内,经过一点微调后,传感器在−40°C至85°C范围内显示0.9%(最大)增益误差,在室温下显示0.05%增益误差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
期刊最新文献
A 40-GS/s 8-bit Time-Interleaved ADC Featuring SFDR-Enhanced Sampling and Power-Efficient Time-Domain Quantization in 28-nm CMOS Sub- μ A Always-on Drive Loop for 3-Axis MEMS Gyroscope MITTA: A Multi-Task Transformer Accelerator With Mixed Precision Structured Sparsity and Hierarchical Task-Adaptive Power Management Xiling: Cryo-CMOS Manipulator Using Dual 18-bit R-2R DACs for Single-Electron Transistor at 60 mK A Wideband Digitally Assisted Frequency Tripler With Adaptively Optimized Output Power in 55-nm SiGe BiCMOS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1