M. Kyaw, S. Mori, N. Dugos, S. Roces, A. Beltran, Shunsuke Suzuki
{"title":"Plasma-Enhanced Chemical Vapor Deposition of Indene for Gas Separation Membrane","authors":"M. Kyaw, S. Mori, N. Dugos, S. Roces, A. Beltran, Shunsuke Suzuki","doi":"10.22146/ajche.50874","DOIUrl":null,"url":null,"abstract":"Polyindene (PIn) membrane was fabricated onto a zeolite 5A substrate by using plasma-enhanced chemical vapor deposition (PECVD) at low temperature. Membrane characterization was done by taking Scanning Electron Microscopy (SEM) and FT-IR measurements and the new peak was found in the plasma-derived PIn film. Membrane performance was analyzed by checking permeability of pure gases (H2, N2, and CO2) through the membrane. PECVD-derived PIn membrane showed high gas barrier properties and selectivities of 8.2 and 4.0 for H2/CO2 and H2/N2, respectively, at room temperature","PeriodicalId":8490,"journal":{"name":"ASEAN Journal of Chemical Engineering","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASEAN Journal of Chemical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.22146/ajche.50874","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Chemical Engineering","Score":null,"Total":0}
引用次数: 2
Abstract
Polyindene (PIn) membrane was fabricated onto a zeolite 5A substrate by using plasma-enhanced chemical vapor deposition (PECVD) at low temperature. Membrane characterization was done by taking Scanning Electron Microscopy (SEM) and FT-IR measurements and the new peak was found in the plasma-derived PIn film. Membrane performance was analyzed by checking permeability of pure gases (H2, N2, and CO2) through the membrane. PECVD-derived PIn membrane showed high gas barrier properties and selectivities of 8.2 and 4.0 for H2/CO2 and H2/N2, respectively, at room temperature