{"title":"Effect of transition metal doping on the photoelectric structure of single layer NbS2 under defects","authors":"Junjie Ni, Lu-Lu Yang, Tianyun Wang","doi":"10.1142/s0217984923502226","DOIUrl":null,"url":null,"abstract":"Excellent semiconductors and novel optical properties are the first criteria for nanomaterial technology. In this paper, the S-atom defect is applied to 1T-NbS2 for the first time, and doping atoms are introduced. The concentration of doping atoms is 3.84% and 4% under the two types of defects. Finally, the metallic properties of NbS2 were weakened successfully, and the highest indirect band gap of 0.27[Formula: see text]eV was induced, which gradually transformed into a brand-new semiconductor material. In addition, partially composite systems exhibit excellent electromagnetic storage, polarizability, and infrared light absorption, showing high reflectivity in the visible and low-frequency UV regions, which can be used to make blackout lenses and reflective coatings. Cd composite systems can be used as a new type of conducting semiconductor for all kinds of equipment.","PeriodicalId":18570,"journal":{"name":"Modern Physics Letters B","volume":" ","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Modern Physics Letters B","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1142/s0217984923502226","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
Excellent semiconductors and novel optical properties are the first criteria for nanomaterial technology. In this paper, the S-atom defect is applied to 1T-NbS2 for the first time, and doping atoms are introduced. The concentration of doping atoms is 3.84% and 4% under the two types of defects. Finally, the metallic properties of NbS2 were weakened successfully, and the highest indirect band gap of 0.27[Formula: see text]eV was induced, which gradually transformed into a brand-new semiconductor material. In addition, partially composite systems exhibit excellent electromagnetic storage, polarizability, and infrared light absorption, showing high reflectivity in the visible and low-frequency UV regions, which can be used to make blackout lenses and reflective coatings. Cd composite systems can be used as a new type of conducting semiconductor for all kinds of equipment.
期刊介绍：
MPLB opens a channel for the fast circulation of important and useful research findings in Condensed Matter Physics, Statistical Physics, as well as Atomic, Molecular and Optical Physics. A strong emphasis is placed on topics of current interest, such as cold atoms and molecules, new topological materials and phases, and novel low-dimensional materials. The journal also contains a Brief Reviews section with the purpose of publishing short reports on the latest experimental findings and urgent new theoretical developments.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
