A. Simashkevich, G. Shevchenko, Yu. Bokshyts, L. Bruc, M. Caraman, I. Dementiev, T. Goglidze, N. Curmei, D. Serban
{"title":"Low-Cost ITO/n-Si Solar Cells with Increased Sensitivity in UV Spectrum Range","authors":"A. Simashkevich, G. Shevchenko, Yu. Bokshyts, L. Bruc, M. Caraman, I. Dementiev, T. Goglidze, N. Curmei, D. Serban","doi":"10.3103/S1068375521030133","DOIUrl":null,"url":null,"abstract":"<p>The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus, the formation by this method of the thin layers with a thickness of about ~1 nm is demonstrated, which allows to obtain a photovoltaic conversion efficiency up to 15.3%. By depositing the luminescent layer on the front side of the ITO/c-Si junctions, which is active in the region of the solar cells sensitivity to the action of UV irradiation, their functionality in the range of 300–1100 nm of the solar spectrum is demonstrated.</p>","PeriodicalId":49315,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"57 3","pages":"315 - 322"},"PeriodicalIF":1.1000,"publicationDate":"2021-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Engineering and Applied Electrochemistry","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.3103/S1068375521030133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ELECTROCHEMISTRY","Score":null,"Total":0}
引用次数: 0
Abstract
The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus, the formation by this method of the thin layers with a thickness of about ~1 nm is demonstrated, which allows to obtain a photovoltaic conversion efficiency up to 15.3%. By depositing the luminescent layer on the front side of the ITO/c-Si junctions, which is active in the region of the solar cells sensitivity to the action of UV irradiation, their functionality in the range of 300–1100 nm of the solar spectrum is demonstrated.
期刊介绍：
Surface Engineering and Applied Electrochemistry is a journal that publishes original and review articles on theory and applications of electroerosion and electrochemical methods for the treatment of materials; physical and chemical methods for the preparation of macro-, micro-, and nanomaterials and their properties; electrical processes in engineering, chemistry, and methods for the processing of biological products and food; and application electromagnetic fields in biological systems.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
