Analysis of Dielectric Properties of PVA/PEG/In2O3 Nanostructures for Electronics Devices

N. Hayder, A. Hashim, M. Habeeb, B. Rabee, A. Hadi, M. K. Mohammed
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引用次数: 1

Abstract

The dielectric characteristics of PVA/PEG/In2O3 nanostructures were tested to use in various electric nanodevices. The films of nanostructures of PVA/PEG/In2O3 were synthesized by casting solution technique. The dielectric characters of PVA/PEG/In2O3 nanostructures were determined. Results expressed that the dielectric parameters of PVA/PEG were rise with rise in the In2O3 NPs ratio. The performance of ε', ε" and σAC with frequency illustrated that the ε' and ε" reduced whereas the σAC rises with rise in frequency. The final results demonstrated the PVA/PEG/In2O3 nanostructures may be suitable in various electrical nanodevices.
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电子器件用PVA/PEG/In2O3纳米结构的介电性能分析
测试了PVA/PEG/In2O3纳米结构在各种电纳米器件中的介电特性。采用浇铸溶液法合成了PVA/PEG/In2O3纳米结构薄膜。测定了PVA/PEG/In2O3纳米结构的介电性能。结果表明,PVA/PEG的介电参数随着In2O3 NPs比例的增加而增加。ε’、ε”和σAC随频率的变化表明,ε’和ε”随着频率的升高而减小,而σAC随着频率的增加而升高。最终结果表明,PVA/PEG/In2O3纳米结构可能适用于各种电纳米器件。
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来源期刊
CiteScore
1.90
自引率
25.00%
发文量
32
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