DFT Investigation of the Hydrogen Adsorption on Graphene and Graphene Sheet Doped with Osmium and Tungsten

Balqees Suliman Alshareef
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引用次数: 4

Abstract

Significant interest has been focused on graphene materials for their unique properties as Hydrogen storage materials. The development of their abilities by modifying their configuration with doped or decorated transition metals was also of great interest. In this work, using the DFT/B3LYP/6-31G/LanL2DZ level of theory, graphene sheet (GS) as one of the materials of interest was doped with two transition metals, Osmium (Os) and Tungsten (W). Two active sites on the GS were tested (C4 and C16) resulted into adsorbed systems, H2@C4-GS and H2@C16-GS. C16 position showed the largest adsorption energy compared to that at C4. Therefore, C4 was replaced by the two metals and two adsorbed systems were formed: H2@Os-GS and H2@W-GS. The binding energy of H2@Os-GS was found to be greater than that of H2@W-GS.
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掺杂锇钨的石墨烯及石墨烯片对氢吸附的DFT研究
石墨烯材料由于其作为储氢材料的独特性能而引起了人们的极大兴趣。通过用掺杂或修饰的过渡金属修饰它们的构型来发展它们的能力也引起了极大的兴趣。在这项工作中,使用DFT/B3LYP/6-31G/LanL2DZ理论水平,石墨烯片(GS)作为感兴趣的材料之一掺杂了两种过渡金属,锇(Os)和钨(W)。测试了GS上的两个活性位点(C4和C16),得到吸附体系,H2@C4-GS和H2@C16-GS.与C4位置相比,C16位置显示出最大的吸附能。因此,C4被这两种金属取代,形成了两个吸附体系:H2@Os-GS和H2@W-GS.的结合能H2@Os-GS被发现大于H2@W-GS.
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