Optimized Design of Low Power Complementary Metal Oxide Semiconductor Low Noise Amplifier for Zigbee Application

S. Manjula, R. Karthikeyan, S. Karthick, N. Logesh, M. Logeshkumar
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Abstract

An optimized high gain low power low noise amplifier (LNA) is presented using 90 nm CMOS process at 2.4 GHz frequency for Zigbee applications. For achieving desired design specifications, the LNA is optimized by particle swarm optimization (PSO). The PSO is successfully implemented for optimizing noise figure (NF) when satisfying all the design specifications such as gain, power dissipation, linearity and stability. PSO algorithm is developed in MATLAB to optimize the LNA parameters. The LNA with optimized parameters is simulated using Advanced Design System (ADS) Simulator. The LNA with optimized parameters produces 21.470 dB of voltage gain, 1.031 dB of noise figure at 1.02 mW power consumption with 1.2 V supply voltage. The comparison of designed LNA with and without PSO proves that the optimization improves the LNA results while satisfying all the design constraints.
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Zigbee低功耗互补金属氧化物半导体低噪声放大器的优化设计
提出了一种基于2.4 GHz频率的90 nm CMOS高增益低功耗低噪声放大器(LNA)。为了达到预期的设计指标,采用粒子群优化(PSO)对LNA进行了优化。在满足增益、功耗、线性度和稳定性等所有设计指标的情况下,成功实现了PSO对噪声系数(NF)的优化。在MATLAB中开发了PSO算法对LNA参数进行优化。采用先进设计系统(ADS)模拟器对参数优化后的LNA进行了仿真。优化后的LNA在1.2 V供电电压下,功耗为1.02 mW,电压增益为21.470 dB,噪声系数为1.031 dB。通过与未采用粒子群优化的LNA的比较,证明了该优化方法在满足所有设计约束的情况下,提高了LNA的性能。
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来源期刊
Journal of Computational and Theoretical Nanoscience
Journal of Computational and Theoretical Nanoscience 工程技术-材料科学:综合
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3.9 months
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