A novel low line regulation CMOS voltage reference without BJTs and resistors

Abstract

A novel CMOS-only low line regulation voltage reference is presented in this paper. An output subcircuit composed of MOSFETs operating in the subthreshold region and saturation region is utilized to eliminate the temperature dependence of mobility and oxide capacitance, and produces a temperature-insensitive voltage reference. No bipolar junction transistors (BJTs) or resistors are used which can decrease the area greatly. By using most of the transistors operating in the subthreshold region, the power dissipation and the supply voltage are reduced. The proposed voltage reference is designed in the standard 0.18 μm CMOS process. The simulation results show that the output voltage is 958.971 mV at TT process corners, a temperature coefficient of 18.6096 ppm/°C range from20 °C to 110 °C is achieved, the line regulator (LR) of the proposed circuit is 0.037 mV/V from 1.5 V to 2.5 V supply voltage, and the power supply rejection ratio (PSRR) is75.77 dB at 100 Hz. The active area of the presented voltage reference is 0.0038 mm ² .