Concept of the InGaAs Plasmonic Waveguide for Quantum Cascade Laser Applications

IF 0.5 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Advances in Electrical and Electronic Engineering Pub Date : 2021-12-30 DOI:10.15598/aeee.v19i4.4099
Adriana Lozinska, M. Badura, B. Ściana
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Abstract

Quantum cascade lasers are sophisticated devices mostly based on InGaAs/AlInAs/InP heterostructures to improve thermal performance. Their structure consists of a core containing hundreds or even thousands of thin layers, covered on both sides with thick cladding waveguides. Such a laser design creates enormous stresses in the core and can cause degradation of the entire device. An alternative to the thick InP claddings are thin, highly doped InGaAs layers used as plasmonic waveguides. This solution allows to achieve a mode confinement above 50 % even at only 150 nm of the waveguide layer, which is extremely difficult in the case of standard designs. The article presents theoretical simulations concerning the influence of the InGaAs plasmonic layer on the mode confinement.
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用于量子级联激光器的InGaAs等离子体波导的概念
量子级联激光器是一种复杂的器件,主要基于InGaAs/AlInAs/InP异质结构来提高热性能。它们的结构由一个包含数百甚至数千薄层的核心组成,两侧覆盖着厚厚的包层波导。这样的激光器设计在核心中产生巨大的应力,并可能导致整个器件的退化。厚InP包层的替代方案是用作等离子体波导的薄的、高掺杂的InGaAs层。该解决方案允许即使在波导层的仅150nm处也实现50%以上的模式限制,这在标准设计的情况下是极其困难的。本文对InGaAs等离子体层对模式限制的影响进行了理论模拟。
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来源期刊
Advances in Electrical and Electronic Engineering
Advances in Electrical and Electronic Engineering ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
33.30%
发文量
30
审稿时长
25 weeks
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