Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

Abstract

This paper investigates the influence of oxide-trapped charge 10 distributions on the C - V dependence of lateral source − base and 11 drain − base junctions of nanoscale metal-oxide-semiconductor 12 field-effect transistors (MOSFET) through simulation. Distribu- 13 tions suitable for different types of electrical voltages are con- 14 sidered. Simulation results show that the transition capacitance 15 of lateral junctions at low applied voltages depends on the posi- 16 tion of the maximum of the distributions along the channel. The 17 ratio of the transition capacitances of source − base and drain − 18 base junctions at low applied voltages depends on the position of 19 the distribution maximum. This dependence can be used to esti- 20 mate the distribution of oxide trapping charges injected into the oxide layer under different electrical stresses.