Electrochemical Impedance Spectroscopy Study of Porous Anodic Alumina Films Fabricated at Low Temperature

IF 0.8 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science-medziagotyra Pub Date : 2023-02-13 DOI:10.5755/j02.ms.30047
Di Ma, Shuying Li, Xinyu Lyu, Shu-bai Li, Yang Cao
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Abstract

A method of fabrication of AAO film in 0.3 mol/L H2C2O4 by adding 1,2-propanediol(PROH) and at sub-zero temperature has been proposed. The electrochemical characteristics of the barrier and porous layers of AAO films before and after pore-filling are examined using electrochemical impedance spectroscopy (EIS). It is shown that the high and medium frequency range corresponds to the barrier layer properties and the low frequency ranges reflect the sealed porous layer properties. The calculated thickness of the barrier layer is in the range of 1 ~ 18 nm. The resistance (Rb) and the thickness (δb) of the barrier layer increase and the capacitance of the barrier layer (CPEb) decrease with the volume percentage of PROH increasing from in electrolyte from 25 % to 75 %. The surface non-homogeneity of AAO film goes better by pore-filling, leading to a decrease in the capacitance of the porous layer (CPEp) and an increase in the porous layer thickness.
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低温制备多孔阳极氧化铝膜的电化学阻抗谱研究
提出了在0.3 mol/L H2C2O4中加入1,2-丙二醇(PROH),在零下温度下制备AAO薄膜的方法。利用电化学阻抗谱(EIS)研究了填充前后AAO薄膜的势垒层和多孔层的电化学特性。结果表明,高频和中频范围对应于阻隔层的特性,低频范围反映了密封多孔层的特性。计算得到的阻挡层厚度在1 ~ 18 nm之间。当电解质中PROH的体积百分比从25%增加到75%时,阻挡层的电阻(Rb)和厚度(δb)增加,阻挡层的电容(CPEb)减小。孔隙填充使AAO膜的表面非均匀性得到改善,导致孔层电容(CPEp)降低,孔层厚度增加。
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来源期刊
Materials Science-medziagotyra
Materials Science-medziagotyra 工程技术-材料科学:综合
CiteScore
1.70
自引率
10.00%
发文量
92
审稿时长
6-12 weeks
期刊介绍: It covers the fields of materials science concerning with the traditional engineering materials as well as advanced materials and technologies aiming at the implementation and industry applications. The variety of materials under consideration, contributes to the cooperation of scientists working in applied physics, chemistry, materials science and different fields of engineering.
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