Ag2Te thin films' structural and optical characteristics as a result of Al doping

IF 1 4区 材料科学 Journal of Ovonic Research Pub Date : 2023-08-01 DOI:10.15251/jor.2023.194.433
Liqaa S. Ali, A. Shihab
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Abstract

During the course of this investigation, Ag2Te and Al-doped Ag2Te films' structural and optical properties at various concentrations (1%, 1.5%) are examined. The thermal evaporation method was used to deposit 400-nm thick Ag2Te thin films on glass substrates at 100 °C. The structure is monoclinic of the polycrystalline films were revealed by (XRD). Between 1 and 1.5%, the activated precursor did not vary with respect to the favored direction. According to the XRD results, the mean crystal sizes ranged from 25.62 to 37.13 nm. The surface of the film is incredibly smooth, according to atomic force microscope study (AFM). The produced films' optical characteristics were investigated. optical absorption coefficient (α) of films were determined using the absorption spectra within the wavelength region (400-1000) nm. It was discovered that the optical energy gap allows direct transmission and that it narrows with doping.. AFM was used to measure the grain size and roughness, which change when impurities are added.
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Al掺杂对Ag2Te薄膜结构和光学特性的影响
在研究过程中,研究了不同浓度(1%、1.5%)的Ag2Te和Al掺杂的Ag2Te薄膜的结构和光学性能。采用热蒸发法在100℃下在玻璃衬底上沉积了厚度为400nm的Ag2Te薄膜。XRD分析表明,多晶薄膜的结构为单斜晶系。在1%和1.5%之间,活化的前体相对于有利的方向没有变化。根据XRD结果,平均晶体尺寸在25.62至37.13nm之间。根据原子力显微镜(AFM)的研究,薄膜的表面非常光滑。研究了制备的薄膜的光学特性。利用在(400-1000)nm波长范围内的吸收光谱测定了薄膜的光学吸收系数(α)。人们发现,光学能隙允许直接传输,并且随着掺杂而变窄。。AFM用于测量晶粒尺寸和粗糙度,当添加杂质时,晶粒尺寸和表面粗糙度会发生变化。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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