Highly efficient electroluminescence devices with a mixed layer of SnO2 and colloidal quantum dots

IF 3.7 3区 工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Journal of Information Display Pub Date : 2022-03-08 DOI:10.1080/15980316.2022.2039790
C. Yoon, Aram Moon, Heesun Yang, Jiwan Kim
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Abstract

We demonstrate the high efficiency of quantum dot light-emitting diodes (QLEDs) that consist of a mixed layer of SnO2 nanoparticles (NPs) and quantum dots (QDs). A stable mixture of SnO2 NPs and QDs is prepared in chlorobenzene and then applied to QLEDs with no separate electron transport layer (ETL). QLEDs with such a simplified structure produce a maximum luminance of 142,855 cd/m2, an EQE of 9.42%, and a current efficiency of 41.18 cd/A that result from the improved charge balance of the mixed layer. This produces one of the best device performances of QLEDs with a non-ZnO inorganic ETL, clearly indicating the remarkable promise of using SnO2 NPs as an inorganic ETL for QLEDs. Moreover, the reduction of fabrication steps in this solution-based process proves advantageous to next-generation display technology.
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SnO2和胶体量子点混合层的高效电致发光器件
我们展示了由SnO2纳米颗粒(NP)和量子点(QD)的混合层组成的量子点发光二极管(QLED)的高效率。在氯苯中制备SnO2 NP和QDs的稳定混合物,然后将其应用于没有单独电子传输层(ETL)的QLED。具有这种简化结构的QLED产生142855cd/m2的最大亮度、9.42%的EQE和41.18cd/a的电流效率,这是由于混合层的电荷平衡的改善。这产生了具有非ZnO无机ETL的QLED的最佳器件性能之一,清楚地表明了使用SnO2 NP作为QLED的无机ETL的显著前景。此外,在这种基于解决方案的工艺中减少制造步骤被证明对下一代显示技术是有利的。
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来源期刊
Journal of Information Display
Journal of Information Display MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
7.10
自引率
5.40%
发文量
27
审稿时长
30 weeks
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