Decomposition of diethylsulphide on tungsten. A dynamic treatment of surface catalysis

K. Fukuda
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引用次数: 5

Abstract

The mechanism of the decomposition of diethylsulphide on tungsten was studied by a dynamic treatment of adsorbed species during the reaction. When diethylsulphide was introduced to tungsten, the evolution of ethylene, ethane and hydrogen were observed in the initial stage of the reaction, and ethylmercaptan and hydrogen sulphide additionally in the later stage. In the initial stage, decomposed sulphur was consumed to form a surface sulphide layer, and after formation of the W8S and W4S layer, ethylmercaptan and hydrogen sulphide appeared in the gas phase. Further decomposition of diethylsulphide on the W4S layer produced no more layers of sulphide. The rate of decomposition of diethylsulphide in terms of ethylene and ethane formation was measured at the reaction temperature (250–300°C) as a function of the amount of adsorbed species. The rate of ethylene formation was first order with respect to the total amount of adsorbed C2 species, and that of ethane formation was first order with respect to the total amount of adsorbed C′2 species and the partial pressure of hydrogen respectively. It was therefore probable that the rate-determining step of the formation of ethylene was a surface reaction involving one molecule of the adsorbed diethylsulphide or corresponding species, and that of ethane formation was the hydrogenation of the intermediate of ethylene formation.
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二乙基硫化物在钨上的分解。表面催化的动态处理
通过对反应过程中吸附物的动态处理,研究了二乙基硫化物在钨上的分解机理。当钨中加入二乙基硫化物时,反应初期有乙烯、乙烷和氢的生成,反应后期有乙硫醇和硫化氢的生成。初始阶段,分解硫被消耗形成表面硫化物层,W8S和W4S层形成后,气相中出现乙硫醇和硫化氢。二乙基硫化物在W4S层上的进一步分解不再产生硫化物层。在反应温度(250-300℃)下,测量了二乙基硫化物的分解速率(乙烯和乙烷的生成)作为吸附物质数量的函数。乙烯的生成速率相对于吸附的C2总量为一级,乙烷的生成速率相对于吸附的C2总量和氢的分压为一级。因此,乙烯形成的速率决定步骤很可能是一个表面反应,涉及一个分子的二乙基硫化物或相应的物质,乙烷形成的速率决定步骤是乙烯形成中间产物的加氢。
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